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  • 1
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Games and Economic Behavior 2 (1990), S. 129-153 
    ISSN: 0899-8256
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mathematics , Economics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5927-5938 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Deuterium nuclear magnetic resonance (NMR) spectra are presented for homologues of two series of pyramidic liquid crystals, viz., hexaalkyloxytribenzocyclononatriene, I-n, and hexaalkanoyloxytribenzocyclononatriene, II-n, (where n represents the number of carbon atoms per side chain). The homologues of series I-n exhibit a single hexagonal columnar mesophase PA, while those of series II-n exhibit one or two columnar mesophases (depending on n); a low-temperature biaxial phase PD, and a high-temperature hexagonal phase PC. NMR measurements were performed in the mesophase region on compounds specifically deuterated at the crown methylene groups of the tribenzocyclononatriene core. The spectra in both systems exhibit dynamic features typical of molecules reorienting about their C3 axes within the columnar structures. The experimental spectra were compared with simulated line shapes calculated on the basis of two reorientation mechanisms, (i) symmetric threefold jumps and (ii) planar diffusion about the molecular symmetry axis. It was found that the two compounds of series I-n studied, I-7 and I-10, exhibit spectral line shapes which fit best the planar diffusion model, as was found earlier for the I-8 homologue of this series, while the spectra of the three compounds of series II-n, II-13, II-14, and II-15 are only consistent with the symmetric threefold jump model. Possible reasons for the difference in behavior between the two series are discussed. In an Appendix the asymptotic method for calculating frequency-domain spectra is described.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5939-5945 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method for calculation of dynamic nuclear magnetic resonance (NMR) line shapes of molecules undergoing reorientation diffusion about a single rotation axis in a symmetric threefold potential is developed using the general theory of Freed. The method is used to calculate deuterium NMR spectra of molecules undergoing reorientational diffusion in a model potential of the form V(cursive-phi)=−V0 cos 3cursive-phi, as a function of the diffusion constant DR, and the potential strength V0. It is found that for V0 smaller than kT the resulting line shapes are very similar to those obtained in a potential-free diffusion. When V0〉kT the uneven distribution of the molecules and the hindering effect of the potential barrier have significant effects on the line shape. In this region two distinct motional effects of the diffusion process are observed: (i) At low DR values molecular diffusion within the potential wells results in averaging of the local distribution and consequently to line narrowing. (ii) At sufficiently high DR values diffusion between the potential wells results in lifetime broadening effects similar to those observed in jump processes. Relations between the diffusion constants and the discrete jump rates are discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1191-1197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral confined epitaxy (LCE) of GaN on Si substrates results in a reduction of thermal crack density with decreasing the lateral dimensions of the growth pattern. Below a critical size, crack-free GaN on Si is obtained. The intensity of band-to-band photoluminescence (PL) peak in LCE GaN is strongly enhanced with respect to uniformly grown GaN on Si. The present study rules out the effect of crack density, internal reflections (microcavity effects), as well as enhanced light extraction efficiency, and excitation or emission through preferred facets (shape effects) as the main factor in PL enhancement. It is shown that the reduction in threading dislocation density (TDD) along the edges of the LCE patterns improves the luminescence efficiency. The relative increase in high quality material (low TDD) with the reduction of LCE unit size is, thus, the main reason for the enhanced PL intensity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 288-290 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epitaxial layers grown uniformly on Si substrates suffer from randomly distributed thermal cracks. The growth on prepatterned Si substrates is demonstrated as an efficient way to control the geometrical distribution of the thermal cracks. In order to study this effect and to find the maximum crack-free lateral dimension of a GaN patterned unit on Si, a simple procedure termed lateral confined epitaxy (LCE) was developed. This procedure confines the growth of GaN to separate mesas of Si, which are defined on the Si substrate prior to the growth. The growth is performed by a single, continuous metalorganic chemical vapor deposition run. LCE enables the variation of mesa lateral size, while keeping the growth rate nearly unchanged. By performing a set of LCE growth runs of ∼0.7 μm GaN, on Si mesas of varying lateral dimensions, we specified the maximum crack-free range of GaN on Si as 14.0±0.3 μm, for that GaN thickness. A reduction of random crack density is observed with decreasing GaN pattern size and is explained in terms of shear-lag stress distribution. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2441-2443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical isolation of unintentionally doped GaN layers due to the damage created by H+ and He+ ions passing through the layer are demonstrated. As a result of the irradiation, the sample resistance increases by 11 orders of magnitude and the band-to-band photoluminescence (PL) emission is totally quenched. Following annealing (1000 °C, 30 s), the conductivity can be nearly completely recovered, whereas only partial recovery of the PL emission is obtained. A model is proposed which invokes the presence of potential barriers for electronic transport across extended defects as the major factor limiting carrier mobility. Radiation defects increase these barriers, thus affecting the sample resistivity. This model fits the experimental results for both H and He induced damage extremely well and thus proves that defects created by nuclear collisions of the ions traversing the layer are responsible for the observed effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Economic Theory 35 (1985), S. 178-185 
    ISSN: 0022-0531
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Economics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 441-442 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International journal of game theory 9 (1980), S. 201-215 
    ISSN: 1432-1270
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Economics
    Notes: Abstract For a class of 2-Person 0-sum repeated games with incomplete information,Aumann/Masch1er [1967] andStearns [1967] have given a necessary and sufficient condition for the existence of v∞ (the value of the infinitely repeated game).Mertens/Zamir [1971] andMertens [1971/72] have given the formula (and thus proved the existence) of $$\mathop {\lim }\limits_{n \to \infty } $$ v n , the limit of the values of the games withn repetitions, for a much larger class of games than that treated byAumann/Maschler andSteams. In this paper we extend the Aumann-Maschler-Stearns results to the larger family of games studied byMertens [1971/72].
    Type of Medium: Electronic Resource
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