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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7682-7687 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of stable crystalline phases of the Cd–Te–O ternary system were prepared by thermal annealing in an Ar flux of amorphous CdTe:O films. The composition of the annealed films depended on the initial oxygen content in the film, the temperature and duration of the annealing process. The annealed films were characterized by means of x-ray diffraction spectroscopy and by optical absorption spectroscopy. The results show that for low oxygen content in the as grown film and high annealing temperature, the CdTe cubic phase is the predominant crystalline phase in the annealed film. For intermediate oxygen content in the as grown film, the result obtained after the annealing process is a composite material consisting in the mixture of both CdTe and CdTeO3 crystallites. The variation of the annealing temperature produces changes in the size of the crystallites of both crystalline phases. It also can change the CdTe to CdTeO3 proportion in the films. For low annealing temperature, the size of the CdTe crystallites in the film is 〈14 nm, the exciton Bohr diameter in CdTe. The optical characterization of the CdTe–CdTeO3 composite material shows that this system is very suitable for the study of optical transitions in the electronic band structure of CdTe. Furthermore, for the films with the smallest CdTe crystallites it is possible to observe the effects in the CdTe band structure produced by the reduction in the size of the CdTe crystallites to a dimension comparable to the exciton Bohr diameter. The annealing process in the as grown films with high oxygen content produces films composed by a mixture of the oxide insulating phases CdTeO3 and CdTe2O5. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the fundamental band-gap E0 of Cd1−xZnxTe alloys with zinc concentrations in the 0 to 0.3 range has been determined by modulated photoreflectance (PR). E0 is found to vary from 1.511 eV for x=0.00 to 1.667±0.008 eV for x=0.3, at room temperature and from 1.602 eV at x=0.00 to 1.762±0.004 eV for x=0.3 at 10 K. The measured broadening parameters Γ have values between 25 and 45 meV at room temperature and decrease monotonically to values around 5 meV or smaller at 10 K. The temperature dependence of the observed band gap energies is well described by the well known Varshni formula E(T)=E(0)−AT2/(T+aitch-theta) for all samples studied. The PR temperature broadening is well understood assuming that it results from the scattering of the excitonic electron-hole pair responsible of the band-to-band transition PR signal off LO phonons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3908-3911 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Investigations of trapping centers have been carried out in CdTe polycrystalline films by using the thermally stimulated conductivity (TSC) technique. The measurements were performed in the temperature range from 80 to 300 K. The TSC spectra showed three peaks related to three trapping levels with energy activations of 0.18, 0.29, and 0.32 eV, respectively. The two first trapping levels correspond to known acceptor centers in bulk CdTe previously reported. It is suggested that the level at 0.32 eV is due to grain boundary defects characteristic of the polycrystalline films. The main parameters of these trapping centers have been determined by using known theoretical relations. The temperature dependence of the dark resistivity indicates that the impurity conduction does not make an important contribution to the TSC spectra of the films. From these measurements an activation energy of 0.49 eV for the conductivity of the films was found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study by photoacoustic spectroscopy the band-gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure changes. We show the band-gap evolution and resistivity as a function of temperature of thermal annealing and determine the process that produces the best combination of high band-gap energy and low resistivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5461-5463 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homogeneous thin films of a-CdTe:O were thermal annealed in an Ar flux. The as-grown samples have an amorphous structure. The annealed films crystallize to a mixture of both CdTe and CdTeO3. For low annealing temperatures (less than 100 °C) it is possible to get CdTe crystallites with sizes smaller than 14 nm. In this work we report measurements of x-ray diffraction and optical absorption spectra of these films. The x-ray diffraction patterns of the films were used to study the CdTe crystallization process as a function of the annealing temperature. The CdTe crystallite size of the films was determined from the diffraction patterns using the Debye–Scherrer formula. It was observed that the CdTe crystallite size increases with annealing temperature. The optical absorption spectra of the films with the smallest CdTe crystallite size show how the absorption band edge of CdTe is shifted by the effects of the crystallite size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2833-2837 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdNiTe nanostructured thin films were prepared by radio frequency sputtering from a target of CdTe and nickel compressed powders. The structural and electrical film properties were studied as a function of the atomic nickel concentration in the films (x=0.05, 0.10, and 0.15). X-ray diffraction patterns showed a cubic CdTe parent structure with a (111) preferential orientation. The microcrystalline grain size in the films showed a systematic decrease with the increase of Ni content, starting with grain sizes of around 35 nm for x=0.05, down to an average of 26 nm for x=0.15. From scanning electron microscopy micrographs, a fine granular morphology with a random distribution of grain sizes in the films was observed. The film electrical resistivity was measured as a function of the temperature in the range T: 26–473 K. The temperature dependence of the dark resistivity over this wide temperature range showed a clear deviation from a simple thermally activated carrier transport mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7217-7220 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal diffusivity α and conductivity k at room temperature of CdTe semiconductors having different crystalline qualities were determined using a photoacoustic technique. Thermal measurements obtained for each sample were correlated with photoluminescence spectroscopic results in order to associate the observed variation of α and k with crystalline imperfections in CdTe. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 452-454 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium doped CdTe polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdTe–Cd–In target. The elemental Cd and In were glued onto the CdTe target covering small areas. The electrical, structural, and optical properties were analyzed as a function of the concentration of both elements. It was found that when Cd and In are simultaneously incorporated, the electrical resistivity drops and the carrier concentration increases. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using this deposition technique, n-type In doped CdTe polycrystalline films can be produced. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 760-763 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cadmium self-doped CdTe polycrystalline films were grown on Corning glass substrates at room temperature by cosputtering from a CdTe–Cd target. The electrical, structural, and optical properties of the films were analyzed as a function of the Cd concentration. Films with a stoichiometric composition, and slightly below and above it, were prepared. In films where the Te exceeds 50 at. %, it is found segregation of Te and its electrical resistivity is about 107 Ω cm. In those with an excess of Cd, the electrical resistivity drops several orders of magnitude, the carrier concentration increases, and the resistivity activation energy drops. From these results, we concluded that using this deposition method, n-type Cd self-doped CdTe polycrystalline films can be produced. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 708-711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xNixTe nanostructured thin films have been deposited using the radio frequency sputtering technique. Films are formed by sphericallike microcrystallites with a broad grain size distribution. The measured nanocrystallite average diameters were 35, 30, and 26 nm corresponding to the films with Ni concentrations of 5%, 10%, and 15%, respectively. The film structure was zincblende, resembling the crystalline structure for bulk CdTe. Particle-size effects were observed in the optical absorption spectra. As the Ni content in the films increases, the grain size diminishes, and the optical band gap (Eg) energy shows a blue shift at a rate of about 7.5 meV/at. %, for Ni concentrations up to 15 at. %. Alloying effects additional to quantum confinement effects are discussed. The Eg shifts due to quantum confinement have been found to fall in the intermediate regime between strong and weak confinement. The quantum yield for the photoluminescence peak increases as the particle size decreases, probably as a result of exciton recombination enhancement due to better nanocrystallites quality.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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