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  • 1
    Electronic Resource
    Electronic Resource
    Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 772-774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a low-temperature wafer bonding method for the realization of integration of GaAs- and InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280–300 °C by taking advantage of the low-temperature solid-state reactions occurring at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. Both the simple mechanical test and standard thermal cycling test prove excellent structural integrity of the joined wafers. Structural analyses reveal only limited interfacial reactions as well as solid-phase epitaxial regrowth of GeSi alloys on the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111008
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  • 2
    Electronic Resource
    Electronic Resource
    Mesoscopic caverns and nucleation twins formed in the growth of Co on Cu (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mesoscopic caverns in the form of facetted voids are observed to form when Cu pumps through pinholes to the outer surface during the epitaxial growth of fcc Co(111) on Cu(111) near 500 °C. We prove that the pinholes are located mainly at boundaries between fcc twin domains that occur with ABC and ACB stacking. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120637
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2179-2181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 A(ring) thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 A(ring) thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100275
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  • 4
    Electronic Resource
    Electronic Resource
    A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3479-3481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report structural, electrical, and optical data for GaN samples grown on both 6H-SiC and sapphire substrates. A two-stage substrate preparation procedure was employed for removing oxygen from 6H-SiC and c-plane sapphire substrates without the need for elaborate high-temperature thermal degassing. Both sapphire and SiC substrates were treated with hydrogen plasma to reduce the surface contamination as evidenced by the observation of sharp (1×1) reconstruction RHEED (reflected high-energy electrons diffraction) patterns. Thin AlN buffer layers were employed and the crystalline quality of GaN films was studied by temperature-dependent Hall measurements, photoluminescence, and x-ray diffraction. Layers with room-temperature mobilities as high as 580 cm2/V s on SiC substrates were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109026
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  • 5
    Electronic Resource
    Electronic Resource
    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si (strained)/Si0.7Ge0.3 (relaxed) modulation-doped structures incorporating unusually thin (700 nm) buffer layers were grown with molecular beam epitaxy at 700 °C. By utilizing (100) substrates misoriented toward (011) by 4°, the density of threading dislocations was reduced by over an order of magnitude as compared with conventional techniques. These layers produced exceptionally high Hall mobilities of 1790 cm2/V s at 300 K and 19 000 cm2/V s at 77 K on n-type modulation-doped heterostructures. The effect of substrate misorientation on threading dislocation density was investigated using transmission electron microscopy and Nomarski microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110603
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  • 6
    Electronic Resource
    Electronic Resource
    p-type zinc-blende GaN on GaAs substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 932-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109848
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  • 7
    Electronic Resource
    Electronic Resource
    GaN grown on hydrogen plasma cleaned 6H-SiC substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report epitaxial GaN layers grown on 6H-SiC (0001) substrates. A two stage substrate preparation procedure is described which effectively removes oxygen from the SiC substrate surface without the need of elaborate high temperature processing. In the first step, dangling Si bonds on the substrate surface are hydrogen passivated using a HF dip before introduction into vacuum. Second, the substrate is treated with a hydrogen plasma reducing the amount of oxygen-carbon bonding to below the x-ray photoemission detection limit. Upon heating in the molecular beam epitaxy (MBE) growth chamber, the SiC substrates are observed to have a sharp (1×1) reconstruction with Kikuchi lines readily visible. GaN epilayers deposited on AlN buffer layers by plasma enhanced MBE show sharp x-ray diffraction and photoluminescence peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108845
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  • 8
    Electronic Resource
    Electronic Resource
    Genetic analysis of four self-incompatible lines in Brassica napus (2001)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 120 (2001), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Reciprocal hybridization between four self-incompatible lines of Brassica napus: 271, 181, 184 and ‘White Flower’, revealed incompatibility. The reciprocal F1s obtained by bud pollination showed self-incompatible reactions, and no segregation for self-incompatibility was observed in all the reciprocal F2 populations, indicating that lines 271, 181, 184 and ‘White Flower’ were genetically identical with regard to self-incompatibility. Observations of self-incompatibility in 17 hybrids from crosses between line 271 and 17 varieties of B. napus showed 10 of the F1 hybrids to be self-compatible, while four were partially self-compatible and three were self-incompatible. Genetic analysis based on F2 and BC1 populations from five self-compatible F1 hybrids and two self-incompatible F1 hybrids suggested the existence of at least two loci controlling the self-incompatibility of line 271: one is the S locus, with dominant and recessive relationships between the S alleles, and the other is the suppressor (sp) of the S locus. The sp locus is genetically different from the S locus, and also shows dominant and recessive relationships between the sp alleles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2001.00551.x
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