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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3914-3918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon films have been deposited by rf plasma decomposition of methane at 50–1400 V negative bias and 1.3×10−3–1.3×10−1 mbar pressure. Hardness, internal stress, density, hydrogen content, and infrared absorption depending on the preparation parameters have been measured. From the IR measurements the ratio of sp3 to sp2 bonds was calculated and the total amount of hydrogen in the films was determined by elastic recoil detection (0.5〉H/C〉0.15). We found in the range of bias voltages 0〈||−VB ||〈100 V polymerlike films, in the range 100 V〈||−VB ||〈600 V diamondlike hard carbon films with high internal stress, and in the range 600〈||−VB ||〈1400 V graphitelike soft films with low stress. The density of the diamondlike films was about 2 g/cm3 and of the graphitelike films about 1.4 g/cm3. The microhardness seems to be correlated to the internal mechanical stress.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1558-1562 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon films were deposited by rf bias sputtering of a carbon target in argon. Bias voltage and argon pressure were varied systematically. Hardness, internal stress, density, hydrogen content, and infrared absorption were measured as functions of the preparation parameters. From the IR measurements the bond ratio of sp3 to sp2 was calculated and the total amount of hydrogen in the films was determined by elastic recoil detection. The hydrogen content was found to be much lower than for films prepared by plasma decomposition of hydrocarbons. Because the film thickness was in the range of 500 nm, the hardness was measured with an ultralow-load diamond indenter. For these measurements the indentation depth was about 60 nm. The internal stress was determined by the bending beam method. The coordination number, number density, and the filling factor were calculated from the measured values. The results have been compared to those for films deposited by plasma decomposition of hydrocarbons.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4729-4735 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study diamondlike a-C:H films have been prepared by different methods: In our first experiment a-C:H films were deposited by plasma decomposition of methane at different bias voltages. In the second experiment a-C:H films with high hardness were implanted with 400-keV C+ ions and different doses between 1013 and 1017 ions/cm2 . Subsequently, the following mechanical properties of the films were measured: The shear modulus μ by the frequency of the surface phonon (Rayleigh wave), the stiffness S by an ultralow load indentation of diamond. The Young's modulus and the Poisson's ratio were calculated from μ and S. The internal stress σ was determined with the bending beam method. From the Young's modulus E and the internal stress σ, the average strain ε of the films has been calculated. From the behavior of ε it was concluded that a phase transition from amorphous diamondlike to amorphous graphitelike a-C:H films occurred with increasing substrate bias voltage.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 487-494 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike a-C:H films have been deposited by plasma decomposition of C2 H2. 50 samples were prepared with a systematic variation of the deposition parameters: the substrate bias voltage was between −100 and −1400 V and the C2 H2 gas pressure was between 4×10−4 and 2.6×10−1 mbar. The following properties of the films were measured: the density by Rutherford backscattering, the total concentration of hydrogen by elastic recoil detection, the bonding ratio sp3 /sp2 by infrared spectroscopy, the internal stress by the bending beam method, and the hardness with a Knoop microhardness tester. It has been shown that the hardness and other mechanical properties cannot be correlated to the average carbon coordination number mc. This is because mc is calculated under the assumption of a homogenous single-phase model, which does not seem to be justified. It is demonstrated that the mechanical properties can be explained by the application of a void model.
    Type of Medium: Electronic Resource
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