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  • 1
    Electronic Resource
    Electronic Resource
    Extremely high hole concentration in GaAs by dual Mg/As implants (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2783-2786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of magnesium implants in GaAs has been found to increase drastically with coimplantation of arsenic and to depend strongly on the As implantation parameters. p-type carrier concentrations as high as 4×1020 cm−3 have been achieved for 5×1015 cm−2, 190-keV Mg+/1×1016 cm−2, 540-keV As2+ implants. The role of the As has been shown to block the Mg diffusion during the silicon-nitride-capped 5-min anneals at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341173
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-dose magnesium implantations in InP activated by rapid thermal annealing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3117-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly doped, near 1019 cm−3, p-type layers have been obtained in InP by ion implantation of magnesium and the use of rapid thermal annealing with proximity encapsulation. The resulting doping profiles can be qualitatively accounted for by considering the interstitial/substitutional diffusion model and the stoichiometric imbalance created by implantation-induced knock-on of phosphorus. The upper limit for substitutional incorporation of magnesium is found to be of the order of 1019 cm−3. Although coimplantation of P and Mg has an effect on the activation and distribution of Mg, it is not as important as in the case of As/Mg in GaAs. The results have important implications for the design of implanted contacts to optoelectronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344145
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon implanted into gallium arsenide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2765-2769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of carbon implanted into GaAs at high doses has been studied. Implantations were done at room temperature and 200 °C. The implanted dopant atoms were activated by capless rapid thermal annealing. The effect of dual implantation with gallium atoms was also investigated. The activation efficiency of implanted carbon is typically low, but can be improved by implanting into a heated substrate or by coimplantation of gallium. The combination of dual implantation and implantation into a heated substrate does not lead to any improvement over the effect of a single, hot implant. It is also shown that the arsenic vacancy concentration determines the activation of the implanted carbon. The results lead to the conclusion that carbon is an amphoteric p-type dopant in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353051
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 778-786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of thin, highly p-doped layers in AlGaAs/GaAs single- and double-heterostructures, grown by metalorganic vapor-phase epitaxy, was studied with C-V etch profiling and secondary ion mass spectroscopy. The effect of different post-growth heat treatments was investigated and diffusion coefficients for both magnesium and zinc were measured. It was found that Mg diffuses about twice as fast Zn and that the order of magnitude of the diffusion coefficient is 10−14 cm2 s−1 at 900 °C, the exact value being process and concentration dependent. A model based on the interstitial–substitutional diffusion mechanism with suitable kinetic limitations was successfully used to simulate the observed dopant concentration profiles.We also found an anomalous strong diffusion of zinc from GaAs into highly n-doped AlGaAs. Detailed results on this and other structures are presented and implications for optimal design of heterostructure devices such as bipolar transistors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345731
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    Paper (German National Licenses)
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