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  • Articles: DFG German National Licenses  (51)
  • Electronic Resource  (51)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 8120-8121 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2585-2592 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Total ionization and attachment cross sections have been measured in C3F8 at 330 K using an electron beam and a total ion collection technique, calibrated by similar measurements on N2O and Xe. Our total ionization cross section is similar in general shape to a previous measurement of this type, but with typically half the magnitude. The ionization threshold cannot be accurately derived from these measurements, due to severe upward curvature immediately above threshold. The positive-ion signal rises above the background at 13.0±0.1 eV, to be regarded as a lower limit to the true threshold. An overall ionization cross section with a threshold at 13.3 eV is recommended, based on threshold data from photoelectron spectroscopy and the present data between 14 and 80 eV. The room temperature total attachment cross section peaks at 2.8 eV with a value of 1.75×10−17 cm2. This is 14 times smaller than the only other measurement of this type we are aware of. There is much better agreement with two more recently reported values unfolded from swarm experiments. The temperature dependence of the predominant dissociative attachment process, involving F− production, was studied in a different apparatus using a mass filter and ion pulse counting. At 730 K the peak cross section has increased by ∼60% and the threshold is lower by 1.1 eV. This second type of measurement was used to study the predominant dissociative attachment process in C2H3Cl, involving Cl− production. At 290 K this has a threshold at 0.85 eV and a peak at 1.35 eV of 3.2×10−17 cm2, in good agreement with recent work elsewhere. At 850 K the cross section at the peak is 2.6 larger, and lower in energy by 0.33 eV, while at 0 eV it has reached 6×10−18 cm2. At higher temperatures effects ascribed to thermal dissociation of the C2H3Cl were observed. The implications of the present results regarding the use of these gases in diffuse discharge switches are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Cardiovascular drug reviews 12 (1994), S. 0 
    ISSN: 1527-3466
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 39 (1974), S. 3877-3880 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1777-1779 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1-nm-thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound-state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak-to-valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak-to-valley ratio, should allow oscillations up to about 1 THz.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2352-2354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new insulating layer is used in a normally-off (i.e., enhancement-mode) field-effect transistor on an InP substrate. It consists of closely spaced, strained AlAs barriers embedded in In0.52Al0.48As between the In0.53Al0.47As channel and the metal gate. This insulating layer increases the forward-bias gate turn-on voltage by approximately 50% and reduces the gate leakage current by as much as 50 times compared to a conventional In0.52Al0.48As insulating layer. In addition, the transistor characteristics are significantly improved such that the maximum current is increased approximately three times and the peak transconductance is increased by 70%. These properties are explained by superior confinement of electrons to the channel in the presence of the AlAs barriers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1047-1049 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conductive metallic oxide thin films of SrRuO3 with single crystalline quality have been grown on (001) SrTiO3 by using pulsed laser deposition. The films have a [00l] orientation with an in-plane relationship of [110]SrRuO3 // [100]SrTiO3. They have excellent metallic behavior with room temperature resistivity of ∼310 μΩ cm and a residual resistance ratio of about 7 at 4.2 K, the largest reported to date. A clear ferromagnetic transition at ∼147 K was detected by resistivity and magnetic measurements. However, the transition becomes blurred as the density-of-point defects increases in the films following a 400 keV proton irradiation with an accumulative dose up to ∼6.0×1016 ions/cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 4058-4060 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-quality GaAs. The high resistivity of the oxygen-implanted area was maintained after the regrowth and no oxygen incorporation was observed in the regrown layer. The cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas is 7 GHz. This demonstration shows that planar technology can be used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3365-3367 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thermal annealing on the microstructure at the grain boundary of a 36.8° symmetric [100] tilt SrTiO3 bicrystal were studied. Scanning tunneling microscopy and atomic force microscopy were used for nondestructive observation of the boundary structures. Annealing the bicrystalline substrates at temperatures as low as 780 °C led to the formation of grooves at their boundaries. This provides direct evidence that the thickness depression of YBa2Cu3O7−δ films at the bicrystal boundaries originates from the underlying grooved substrates. Defects characterized as holes with diameters ranging from ∼30 nm to ∼200 nm were also observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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