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  • Artikel: DFG Deutsche Nationallizenzen  (79)
  • 1995-1999  (71)
  • 1985-1989  (8)
  • 1
    Digitale Medien
    Digitale Medien
    Giant magnetoresistive memory effect in Nd0.7Sr0.3MnOz (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5165-5165 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of a magnetic field (B). Here we reported that the conductivity of the films depends not only on the applied field but also on the magnetic history. At T well below the temperature Tp where the zero-field resistivity has a peak, the film enters a high conductivity state [(ΔR/RB)(approximately-greater-than)103] upon application of a magnetic field which persists even when B is reduced to zero. The original "zero'' field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. That is, while the remanent magnetization is small the remanent magnetic resistivity is 10−3 times the initial zero-field-cooled resistivity. A possible explanation based on a two-component model of semiconducting matrix with embedded shunting paths of ferromagnetic material will be presented. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361542
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  • 2
    Digitale Medien
    Digitale Medien
    Giant magnetoresistive memory effect in Nd0.7Sr0.3MnOz films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3031-3033 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero'' field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115444
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  • 3
    Digitale Medien
    Digitale Medien
    Multilayer optics for harmonic control of angiography beamline sources : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3357-3357 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In recent work, multilayers with band-tailored optics for dual energy digital subtraction angiography (DDSA) applications have been designed and tested at SSRL. Control of various multilayer parameters, including period grading, ratio of high-to-low Z material thickness, number of layers, etc., was used to produce reflectors with bandwidths ranging from 0.6%–10% and efficiencies in the 30%–95% range. In this paper, we consider the control of multilayer bandshapes and the implementation of double-reflection multilayer configurations to further control the first harmonic (33 keV) bandwidth and to suppress or eliminate the 66 keV and 99 keV harmonics present on angiography beamlines driven by wiggler or micropole undulator sources. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147465
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  • 4
    Digitale Medien
    Digitale Medien
    Unsteady separation from the leading edge of a thin airfoil (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 704-714 
    Details
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: At high Reynolds numbers, the process leading to dynamic stall on airfoils initiates in the leading-edge region. For thin airfoils, the local motion near rounded leading edges can be represented as flow past a parabola and when the mainstream flow is at an angle of attack to the airfoil, a portion of the boundary layer will be exposed to an adverse pressure gradient. Once the angle of attack exceeds a certain critical value, it is demonstrated that unsteady boundary-layer separation will occur in the leading-edge region in the form of an abrupt focused boundary-layer eruption. This process is believed to initiate the formation of the dynamic stall vortex. For impulsively-started incompressible flow past a parabola, a generic behavior is found to occur over a range of angles of attack, and a limit solution corresponding to relatively large angles is found. The separation in the leading-edge region develops in a zone of relatively limited streamwise extent over a wide range of angles of attack. This suggests that localized control measures (such as suction) may possibly be effective at inhibiting separation. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.868856
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  • 5
    Digitale Medien
    Digitale Medien
    Growth characterization of YBa2Cu3O7−x thin films on (100) MgO (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 310-312 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The growth features of YBa2Cu3O7−x thin films on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that epitaxial growth (c-axis oriented) is achieved despite a large lattice mismatch of about 9% between the film and the substrate. Detailed studies of the energy dependence of the dechanneling yield at the film-substrate interface for films of different thickness reveal the presence of dislocations probably formed by strain relief in the initial state of growth. Stacking faults appear as the main defect structure in the bulk of the films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102413
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  • 6
    Digitale Medien
    Digitale Medien
    Linear analysis of electromigration-induced void instability in Al-based interconnects (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 754-759 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Void shape changes induced by electromigration pose reliability problems in Al-based interconnects. Recent observations have shown that a rounded void sometimes collapses to a transverse slit in an interconnect with bamboo-like grain structure. This article provides a linear stability analysis for a circular void that is only partially conductive in an otherwise infinite conductive medium. The relation between the inner conductivity (i.e., the conductivity of the medium in the void) and the critical remote electric field intensity, Ecr, for the linear stability of the void is established. It is proven that when the inner conductivity becomes zero, Ecr goes to infinity, and we can look upon the inner conductivity of a vacuum void as zero. That is why the vacuum circular void is linearly stable. It is also shown that when the inner conductivity is very small, the stability of a void is sensitive to it. From the computational results, we know that if the inner conductivity is 0.1% of that outside the void, the Ecr is only twenty times of that for the dislocation loop case. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366748
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  • 7
    Digitale Medien
    Digitale Medien
    Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1792-1794 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102320
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  • 8
    Digitale Medien
    Digitale Medien
    Preparation and superconducting properties of ultrathin YBa2Cu3O7−x films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2367-2369 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrathin films of YBa2Cu3O7−x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed temperature-activated conductivity and only partial transitions to superconductivity due to inhomogeneities in the film morphology. On MgO, the critical film thickness leading to deteriorations of the transport properties was 6 nm. An analysis of the fluctuation-enhanced conductivity near Tc in terms of the Aslamazov–Larkin theory [Phys. Lett. A 26, 238 (1968)] revealed three-dimensional behavior even in the thinnest fully superconducting films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101530
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  • 9
    Digitale Medien
    Digitale Medien
    Investigation of transverse Peltier effect on top-seeded melt textureYBa2Cu3O7−δ (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3587-3589 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The transverse Peltier effect is investigated on the top-seeded melt texture superconductor YBa2Cu3O7−δ (YBCO). By restricting the heat absorbing or evolving on one of the sample's surfaces, the Peltier heat flow is converted into a temperature difference for measurement. The temperature difference is found proportional to the current applied, which is in accordance with the prediction of transverse Peltier effect. Based on a simplified model, the difference of the Seebeck coefficients between the ab plane and the c axis, |Sab−Sc|, is about 35 μV/K. It is in good agreement with that of large single crystal [I. Terasaki, Y. Sato, S. Tajima, S. Miyamoto, and S. Tanaka, Physica C 235-240, 1413 (1994)]. The transverse Peltier effect is verified. This supports the idea that the off-diagonal thermoelectric effect is responsible for the anomalously high laser-induced transient transverse voltage on the oriented YBCO superconducting thin films. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117215
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  • 10
    Digitale Medien
    Digitale Medien
    Ultrafast phase dynamics of coherent carriers in GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3321-3323 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrafast phase dynamics of free-induction decay for carriers in bulk GaAs is studied with differential-phase spectroscopy. The instantaneous phase shifts of the free-induction decay with respect to the excitation pulses are extracted from simultaneously recorded laser pulse autocorrelation and free-induction decay in GaAs. Ultrafast phase dynamics during and immediately after the femtosecond pulse excitation are numerically evaluated with optical Bloch equations using pump pulse and semiconductor exciton parameters as input. Good agreement of the theory with experiment is obtained. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122708
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