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Digitale Medien

Radiation enhanced outdiffusion during ion implantation (1979)

Anttila, A. ; Hautala, M.

Springer

Applied physics 19 (1979), S. 199-203

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Details

ISSN: 1432-0630

Schlagwort(e): 61.70T ; 61.80J

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract For a systematic prediction of the radiation-enhanced outdiffusion occurring during implantation, the use of a model based on the effect of vacancy flow on diffusion is described. The model agrees reasonably well with experiments in all twentysix measured cases. For the systematic understanding of the radiation enhanced outdiffusion, an approximative diagram based on the activation energy of self-diffusion is constructed for all pure elements and its application possibilities are discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00932398

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