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  • Artikel: DFG Deutsche Nationallizenzen  (3)
  • Chemistry  (3)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (3)
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1476-1480 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: The X-ray and deep UV radiation response is described for resist systems consisting of poly(4-tert-butoxycarbonyloxystyrene-co-sulfur dioxide) PTBSS combined with an arylmethyl sulfone. A 2:1 4-tert-butoxycarbonyloxystyrene (TBS): sulfur dioxide (SO2) resist has been found to function as a highly sensitive, 1.4 nm X-ray, single-component, chemically amplified resist. The same resist, however, exhibits reduced sensitivity to 0.8 nm X-rays and deep UV (248 nm) radiation. Improvement in 0.8 nm X-ray sensitivity is achieved by the addition of 12 mol% bis(3,4-dichlorobenzyl) sulfone (DCBS) to the 2:1 TBS:SO2 resist. For this two-component resist formulation, the 0.8 nm X-ray sensitive improved from 〉375 to 125 mJ/cm2. Similarly, the sensitivity of the 3:1 TBS:SO2 copolymer to deep UV radiation improves to 40 mJ/cm2 with addition of 10 mol% DCBS. Sulfones, such as DCBS, provide two-component resist formulations capable of 〈0.5 μm resolution.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1509-1510 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Methodology was developed for the synthesis of novel 2-substituted o-nitrobenzyl chromophores, which were derivatized as the tosylate esters. The thermal stabilities of these new tosylates fell within the range predicted from an empirical model. Lithographic sensitivities of deep UV resists made from these new esters and poly(4-(tert-butoxycarbonyloxy)styrene-sulfone) ranged from 45 to 90 mJ/cm2.
    Zusätzliches Material: 2 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    ISSN: 1042-7147
    Schlagwort(e): X-ray and deep UV lithography ; Photoacid generators ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: The X-ray (1.4 nm) and deep UV (248 nm) radiation responses of chemically amplified photoresists incorporating arylmethyl sulfone photoacid generators were evaluated. The arylmethyl sulfones were primarily derivatives of benzyl phenyl sulfone, selected to reveal the importance of desulfonylation and internal abstraction with regard to the photochemical efficiency of acid generation. At 1.4 nm, benzyl phenyl sulfone gave a much more sensitive resist than dibenzyl sulfone, while the methyl derivatives of benzyl phenyl sulfone did not give much improvement over the parent compound. This suggests that desulfonylation is more important than internal abstraction for increased photochemical efficiency. At 248 nm, similar trends were observed, but with some modifications arising from the variation in extinction coefficient among the sulfones. Sensitivities at or below 20 mJ/cm2 were obtained for both wavelength ranges.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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