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  • 1
    Electronic Resource
    Electronic Resource
    Deep-UV lithographic response and quantum efficiency calculations of poly((trimethylsilyl)methyl Methacrylate-(chloromethyl)styrene) copolymers (1989)
    s.l. : American Chemical Society
    Chemistry of materials 1 (1989), S. 509-514 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00005a009
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  • 2
    Electronic Resource
    Electronic Resource
    Radiation-induced chemistry of poly(4-[(tert-butoxycarbonyl)oxy]styrene-co-sulfur dioxide) (1992)
    s.l. : American Chemical Society
    Chemistry of materials 4 (1992), S. 278-284 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00020a012
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  • 3
    Electronic Resource
    Electronic Resource
    Lithographic Resist Materials Chemistry (1993)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 23 (1993), S. 11-43 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.23.080193.000303
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of monolithic masks for 0.25 μm x-ray lithography (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have constructed monolithic masks for proximity x-ray lithography by forming 1 μm thick polycrystalline Si membranes directly on glass support frames. Finished masks are 78 mm in diameter and ∼5 mm thick, with the Si membrane spanning 27 mm. The monolithic design provides simple processing and unprecedented flatness of 30 nm across the membrane and 〈500 nm across the entire disk. Mask blanks were metallized with 500 nm of W that was sputter deposited under conditions that hold the film stress 〈50 MPa. Tungsten was patterned by reactive ion etching to form features as small as 0.25 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105778
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    The 1.4 and 248 nm radiation response of chemically amplified resists containing arylmethyl sulfone photoacid generators (1994)
    New York, NY : Wiley-Blackwell
    Polymers for Advanced Technologies 5 (1994), S. 49-55 
    Details
    ISSN: 1042-7147
    Keywords: X-ray and deep UV lithography ; Photoacid generators ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The X-ray (1.4 nm) and deep UV (248 nm) radiation responses of chemically amplified photoresists incorporating arylmethyl sulfone photoacid generators were evaluated. The arylmethyl sulfones were primarily derivatives of benzyl phenyl sulfone, selected to reveal the importance of desulfonylation and internal abstraction with regard to the photochemical efficiency of acid generation. At 1.4 nm, benzyl phenyl sulfone gave a much more sensitive resist than dibenzyl sulfone, while the methyl derivatives of benzyl phenyl sulfone did not give much improvement over the parent compound. This suggests that desulfonylation is more important than internal abstraction for increased photochemical efficiency. At 248 nm, similar trends were observed, but with some modifications arising from the variation in extinction coefficient among the sulfones. Sensitivities at or below 20 mJ/cm2 were obtained for both wavelength ranges.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pat.1994.220050107
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  • 6
    Electronic Resource
    Electronic Resource
    Arylmethyl sulfones: A new class of photoacid generators (1992)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 32 (1992), S. 1476-1480 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The X-ray and deep UV radiation response is described for resist systems consisting of poly(4-tert-butoxycarbonyloxystyrene-co-sulfur dioxide) PTBSS combined with an arylmethyl sulfone. A 2:1 4-tert-butoxycarbonyloxystyrene (TBS): sulfur dioxide (SO2) resist has been found to function as a highly sensitive, 1.4 nm X-ray, single-component, chemically amplified resist. The same resist, however, exhibits reduced sensitivity to 0.8 nm X-rays and deep UV (248 nm) radiation. Improvement in 0.8 nm X-ray sensitivity is achieved by the addition of 12 mol% bis(3,4-dichlorobenzyl) sulfone (DCBS) to the 2:1 TBS:SO2 resist. For this two-component resist formulation, the 0.8 nm X-ray sensitive improved from 〉375 to 125 mJ/cm2. Similarly, the sensitivity of the 3:1 TBS:SO2 copolymer to deep UV radiation improves to 40 mJ/cm2 with addition of 10 mol% DCBS. Sulfones, such as DCBS, provide two-component resist formulations capable of 〈0.5 μm resolution.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760322006
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of varying the composition of copolymers of glycidyl methacrylate and 3-chlorostyrene (GMC) on electron lithographic performance (1983)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 975-979 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The polymerization kinetics, molecular parameters, and electron lithographic response of a series of copolymers of glycidyl methacrylate (GMA) and 3-chlorostyrene (CLS) have been determined. The polymerization rate, molecular weight, and polydispersity decrease with increasing mole fraction of 3-chlorostyrene (XCLS). Similarly, the sensitivity of this system decreases as the percentage of CLS in the copolymer increases. The value of Dg0.5 for the copolymer containing 14.3 mole percent CLS is 0.45 μC/cm2 increasing to 3.2 μC/cm2 for the 54 percent CLS copolymer of equivalent molecular weight. On the contrary the wet air and O2 plasma etch rates decrease as XCLS increases. For example, the etch rate using wet air for PGMA is ∼ 30 percent greater than GMC (XCLS = 0.54). The post exposure polymerization rate decreases as the CLS content increases. The extent of the post cure reaction is dose dependent being a maximum at Dg0.6 = 0.64 μC/cm2 for the copolymer containing 14.3 mole percent CLS.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760231711
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  • 8
    Electronic Resource
    Electronic Resource
    Optimal developer selection for negative acting resists (1986)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 26 (1986), S. 1158-1164 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A methodology for determining the optimal single component developer/rinse pair for a negative acting resist is described. This method is applicable to any resist basing its negative action on crosslinking and development in organic based solvents. Within the method, initial developer/rinse candidates are identified by utilizing the Hansen 3-dimensional solubility parameter model. This model provides a thermodynamic solubility picture of the resist, and determines those developers which will only minimally contribute towards swelling of defined features. Developer/rinse pairs are subsequently evaluated for acceptable resist dissolution kinetics, and compatibility with existing spray development processes. The optimum developer/rinse pair will only minimally effect changes in temperature which result in a minimum sensitivity to relative humidity variations. The use of this method is illustrated by choosing an optimal developer/rinse system for a chlorine containing, styrene based negative acting resist. The overall electron beam lithographic performance of this resist is shown to be improved with respect to a previously used 2-component ketone based developer.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760261617
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  • 9
    Electronic Resource
    Electronic Resource
    A sub-0.5 μm bilevel lithographic process using the deep-UV electron-beam resist p(si-cms) (1989)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 29 (1989), S. 920-927 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Optimization of the deep-UV and electron-beam lithographic properties of a copolymer of trimethylsilylmethyl methacrylate (SI) and chloromethylstyrene (CMS), P(SI-CMS), within a weight average molecular weight range of 1.4 to 4.1 × 105 and 90 to 93 mole percent SI composition has been achieved. The solubility behavior of P(SI-CMS) resist was examined using the Hansen 3-dimensional solubility parameter model and dissolution rate measurements. Swelling of the resist has been minimized through the identification of a single component developer (2-propanol) and rinse (water) system. For the material containing 90 mole percent SI (14.9 weight percent Si) and M̄ω = 1.4 × 105, the sensitivity to 248 nm radiation is 65 mJ/cm2 and to electron-beam exposure is 3.4 μC/cm2 at 20 kV. This material Is applicable to bilevel lithographic processes, and the O2 reactive ion etching (RIE) rate is 16 times slower than standard hard-baked photoresist. Using a He/O2(60/40) RIE pattern transfer process, 0.4 μm line/space patterns have been resolved in a 1.3 μm bilayer structure for deep-UV exposures, and 0.25 μm imaging has been demonstrated in a 0.7 μm thick planarizing layer using electron beam irradiation. The loss in linewidth associated with the 0.25 μm process is ∼0.04 μm.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760291408
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