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  • 1
    Electronic Resource
    Electronic Resource
    Catalytic effect of SiO on thermomigration of impurities in SiO2 (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1427-1429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that encapsulated thin Si films, adjacent to SiO2, are dissolved at elevated temperatures by a reaction: Si+SiO2→2SiO, with SiO diffusing through the silica network. The presence of SiO in SiO2 in a concentration ≤3 at. % has a profound effect on thermomigration of dopant impurities in the oxide. We propose a model for transport of As-, Sb-, P-, and Ge-rich precipitates, 50–1000 A(ring) in diameter, based on a reaction between SiO2 and the precipitates that is mediated by a catalytic influence of SiO molecules. Only in the presence of SiO are the bonds in the SiO2 network broken ahead of the drifting clusters and regrown behind them. The model predicts that the migration of precipitates is controlled by diffusivity of SiO in silica, consistent with the narrow range of drift velocities for clusters of different chemical compositions. The data also suggest that SiO2 dissociation at the Si/SiO2 interface is diffusion limited, which explains why decomposition of thin SiO2 in vacuum is spatially inhomogeneous, while thick films used in our experiments react uniformly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101407
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitation of group V elements and Ge in SiO2 and their drift in a temperature gradient (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1178-1180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that P, Sb, and Ge ions implanted in SiO2 precipitate into spherical clusters of up to 1000 A(ring) diameter when heat treated in an oxygen-free ambient. This behavior is similar to that reported earlier for As implants. The clusters can be detected directly by transmission electron microscopy, or inferred from the unidirectional drift of the doped zone in a temperature gradient. Boron, a representative of group III, is the only element among those tested that does not migrate in a ∇T, suggesting the absence of phase separation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100664
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  • 3
    Electronic Resource
    Electronic Resource
    Release of As from SiO2 by a temperature gradient and formation of buried n+ conductive layers in Si-on-SiO2 structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1425-1427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the utility of a temperature gradient ∇T in transporting dopants, such as As, unidirectionally through SiO2 and into Si. The transport, based on thermomigration of dopant-rich precipitates toward the heat source, turns oxide into an efficient diffusion source. It also provides the only possible method of forming buried n+ conductive layers in recrystallized, thick Si-on-SiO2 structures. To build such structures, arsenic is implanted into the oxide, where it remains trapped during deposition of polycrystalline Si and its recrystallization from the melt, but is subsequently released into the Si film by a directional drift in the ∇T. In the future, controlling dopant transport with two independent parameters (temperature and ∇T), instead of the temperature alone, may allow processing of three-dimensional circuits at higher temperatures than would be otherwise possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99689
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  • 4
    Electronic Resource
    Electronic Resource
    High-temperature stability of Si/SiO2 interfaces and the influence of SiO flux on thermomigration of impurities in SiO2 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2492-2494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze experimentally unidirectional mass transport of As implanted into a SiO2 film covered with Si and heated to 1405 °C in a temperature gradient. The data can only be explained if we postulate that the thermomigration process is mediated by a flux of SiO molecules, flowing from the Si/SiO2 interfaces into the oxide. From the delay times before the onset of As drift, we estimate diffusivity of SiO at ∼4×10−13 cm2 /s at 1405 °C. The data also explain the apparent dichotomy between high-temperature dissociation of SiO2 , measured experimentally and predicted by thermodynamic arguments, and the ability to heat Si-coated SiO2 up to the melting point of Si at 1412 °C without any loss of the oxide integrity. The latter is possible because coated SiO2 saturates with SiO, resulting in steady-state conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100527
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of monolithic masks for 0.25 μm x-ray lithography (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have constructed monolithic masks for proximity x-ray lithography by forming 1 μm thick polycrystalline Si membranes directly on glass support frames. Finished masks are 78 mm in diameter and ∼5 mm thick, with the Si membrane spanning 27 mm. The monolithic design provides simple processing and unprecedented flatness of 30 nm across the membrane and 〈500 nm across the entire disk. Mask blanks were metallized with 500 nm of W that was sputter deposited under conditions that hold the film stress 〈50 MPa. Tungsten was patterned by reactive ion etching to form features as small as 0.25 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105778
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  • 6
    Electronic Resource
    Electronic Resource
    DEFECT CHEMISTRY AND CATALYSIS IN OXIDATION AND REDUCTION OVER PEROVSKITE-TYPE OXIDES (1976)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 272 (1976), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1976.tb34221.x
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