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  • Articles: DFG German National Licenses  (45)
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  • Articles: DFG German National Licenses  (45)
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  • 1
    Electronic Resource
    Electronic Resource
    Plastic deformation at high temperatures of pure and Mn-doped GaSb (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4825-4828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the plastic behavior of GaSb and Mn-doped GaSb at high temperature has been analyzed. Several experiments at different constant load and temperatures around 500 °C were carried out. The parameters used in the Haasen model have been obtained experimentally and compared with the ones obtained from simulations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406970
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  • 2
    Electronic Resource
    Electronic Resource
    Pockel's electro-optic coefficients of lithium tetraborate Li2B4O7 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2038-2041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pockel's electro-optic coefficients r31 and r33 of Li2B4O7 have been measured with an improved interferometric (Mach–Zehnder) method. The effective rc coefficient has also been measured by a polarimetric setup which, within the experimental error, has given the same value as that of the interferometric method. Attempts to measure the r42 coefficient with either the interferometric or the polarimetric method have given a value below the detection limit of our setups. All coefficients are given in terms of the published values of the piezoelectric coefficient d13. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371005
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  • 3
    Electronic Resource
    Electronic Resource
    Transient electrical field characteristics due to polarization of domains in bulk LiNbO3 during Czochralski growth (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 862-864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient behavior of the electric field during simultaneous growth and in situ poling of LiNbO3 has been studied. The transient features have been correlated with the poling of the multidomain seed and crystal, and domain reversal in poled seed. A steady-state condition is obtained after the shoulder region of the crystal is terminated and the crystal reaches its final diameter. Finally, the critical values of field parameters necessary to obtain complete monodomain crystals without causing melt electrolysis at the solid–liquid interface have been analyzed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364171
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  • 4
    Electronic Resource
    Electronic Resource
    Passivation of surface and bulk defects in p -GaSb by hydrogenated amorphous silicon treatment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3246-3252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361220
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of thermal annealing on Te precipitates in CdTe wafers studied by Raman scattering and cathodoluminescence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2806-2808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as-grown crystals with random distribution of precipitates over the whole volume, improvement at different stages of thermal annealing is demonstrated. As-grown p-CdTe wafers were annealed at 500–600 °C either in Ga melt or in Cd vapor for 2 or 22 h. The kinetics of dissolution of Te precipitates was found to be similar for both the Ga melt and Cd vapor annealing processes. Short-time annealing causes the disappearance of small Te precipitates, while the larger ones, 5–10 μm in size which decorate the extended structural defects, still remain. After a long-time annealing, the complete disappearance of Te precipitates occurs in the wafers volume. Interestingly, it was observed that the disappearance of Te precipitates during annealing starts in the central part of the bulk wafer and is followed by a precipitate gettering at the wafer surface. This implies that it is possible to obtain precipitate-free CdTe wafers by postgrowth annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358687
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  • 6
    Electronic Resource
    Electronic Resource
    Study of point defects in CdTe and CdTe:V by cathodoluminescence (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3720-3723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are involved in the mentioned emission bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357442
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  • 7
    Electronic Resource
    Electronic Resource
    Nature of compensating luminescence centers in Te-diffused and -doped GaSb (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1112-1115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of tellurium in undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect GaSb or related complex. The reasons for the formation of various acceptor centers have been discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362848
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  • 8
    Electronic Resource
    Electronic Resource
    Cathodoluminescence characterization of Ge-doped CdTe crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1992-1995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 1017 and 1019 cm−3 on the compensation of VCd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360173
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  • 9
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7186-7190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361434
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and second harmonic generation characterization of Er3+ doped bulk periodically poled LiNbO3 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 593-595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of Er3+ doped bulk periodically poled lithium niobate have been grown by the Czochralski method. The efficiency, tuning and thermal tolerances of infrared to green second harmonic generation have been measured, showing good accordance with a 4%–5% dispersion in the domain period length. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121866
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