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  • 1
    Digitale Medien
    Digitale Medien
    Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2776-2779 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348636
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  • 2
    Digitale Medien
    Digitale Medien
    Scanning tunneling spectroscopy study of erbium doped GaSb crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1449-1451 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope–scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370910
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  • 3
    Digitale Medien
    Digitale Medien
    Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 987-992 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2×1017, 4.5×1017, and 1.5×1018 cm−3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357783
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  • 4
    Digitale Medien
    Digitale Medien
    Nature of compensating luminescence centers in Te-diffused and -doped GaSb (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1112-1115 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diffusion of tellurium in undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect GaSb or related complex. The reasons for the formation of various acceptor centers have been discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362848
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  • 5
    Digitale Medien
    Digitale Medien
    Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4466-4468 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cathodoluminescence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs:Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. Positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higher vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341269
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  • 6
    Digitale Medien
    Digitale Medien
    Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2648-2650 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as-grown single crystals. Postgrowth annealing in vacuum, gallium, and antimony atmospheres has been performed to obtain more accurate information about the defect structure in this material. In general, on annealing, homogeneous distribution of impurities is observed throughout the wafers. CL spectra show that a luminescence band (centered at 756 meV) is enhanced by annealing in a gallium atmosphere, suggesting that Ga atoms play an important role in the formation of this acceptor center. The 756 meV peak has been attributed to a transition from conduction band to an acceptor center comprised of GaSb or a related complex. Interestingly, localized crystallization at the subgrain boundaries seems to occur by annealing in Ga atmosphere. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114324
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  • 7
    Digitale Medien
    Digitale Medien
    Application of scanning electron acoustic microscopy to the characterization of n-type and semi-insulating GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1357-1359 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107485
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  • 8
    Digitale Medien
    Digitale Medien
    Cathodoluminescence enhancement in porous silicon cracked in vacuum (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1728-1730 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123669
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  • 9
    Digitale Medien
    Digitale Medien
    Heterogeneity of tetracycline resistance determinants
    Amsterdam : Elsevier
    Plasmid 3 (1980), S. 99-108 
    Details
    ISSN: 0147-619X
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0147-619X(80)90101-8
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  • 10
    Digitale Medien
    Digitale Medien
    Electronic structure of Fibonacci Si δ-doped GaAs
    Amsterdam : Elsevier
    Physics Letters A 194 (1994), S. 184-190 
    Details
    ISSN: 0375-9601
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(94)91281-5
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