Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 1631-1636
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence excitation spectroscopy (PLE) and photoluminescence (PL) at resonant excitation (below the GaAs and the wetting layer bandgap). In PLE measurements we find a clear resonance from the first excited hole state as well as resonances from a relaxation via different phonons. From a comparison of the PL-rise times in time resolved spectroscopy, we conclude on a fast electron relaxation (≤50 ps) and a slow hole relaxation with a time constant of about 400 ps. Different relaxation paths are observed in the InAs/GaAs quantum dot system and allow us to identify the hole relaxation in the SADs as multiphonon assisted tunneling. The PL-decay time in the SADs after resonant excitation (about 600 ps) is attributed to the lifetime of the quantum dot exciton. In agreement with theoretical predictions, we find a constant lifetime of about 600 ps for temperatures below 50 K and a linear increase of the lifetime between 50 and 100 K with a slope of 26 ps/K. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366876
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