Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Calculation of hot electron distributions in silicon by means of an evolutionary algorithm (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5061-5066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to simulate electronic transport at high energies in silicon is introduced, which is based on a mixture of evolutionary optimization algorithms and the Monte Carlo technique. The optimization technique of the evolutionary algorithm is used to find electron distributions which are in agreement with a given physical quantity, for example, a measured substrate current. In this way, the evolutionary algorithm can calculate backward the electron distributions from results of measurements. A mutation operator, which is based on the Monte Carlo technique, is used to direct the optimization of the evolutionary algorithm toward physically correct distributions. A comparison of the results of this new approach with electron distributions calculated by a full band Monte Carlo program demonstrates both the backward calculation ability of the evolutionary algorithm and the correctness of the physical model in the Monte Carlo-like mutation operator. It becomes obvious that the electron distribution in silicon is mainly determined by the scattering rates. By suppressing the optimization of the evolutionary algorithm the Monte Carlo-like mutation operator alone was found to provide a powerful new type of Monte Carlo technique. While these methods are not as precise as a full band Monte Carlo approach, they are shown to be numerically efficient and give also a good fit to reliability related hot electron effects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363551
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dynamics of heterostructure hot-electron diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1423-1427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of heterostructure hot-electron diodes are examined by Monte Carlo simulations. The transient analysis indicates that the limiting time constant for electronic switching from low to high conduction is of the order of the device transit time provided that tunneling- and thermionic-emission time constants associated with the formation of accumulation layers are of shorter duration; since the average electron velocities are of the order of 3×107 cm/s for typical device dimensions of 1000 A(ring), it follows that picosecond switching times should be possible for such device feature sizes. The effects of electron-electron interactions have also been considered; their influence on diode switching and on the switching of heterolayer devices in general are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Physics of real-space transfer transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2005-2013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physics of real-space transfer transistors has been studied by self-consistent particle Monte Carlo methods. Results of our simulations reproduce all experimentally known features of these devices. In particular, we study and explain the reasons of negative differential resistance, saturation of drain and substrate currents, the negative transconductance [gm=(ΔId,sat/ΔVsub)〈0] effect, the importance of the subsidiary minima (L-X valleys) in GaAs and of interface barrier heights, and the switching characteristics of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342892
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1384-1386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of Monte Carlo simulations of Si and GaAs p-n electron emitters are presented. A single-electron Monte Carlo transport simulation is used to obtain the total number, including avalanche multiplication, of electrons which reach the surface of the semiconductor, as well as the fraction of these which overcome the work function and are emitted into the vacuum. The distribution function is obtained, as well as ensemble average of quantities such as the ionization coefficient. The efficiency of the device is calculated as a function of both the work function and the top conducting channel thickness. The potential performance of GaAs devices is explored via the Monte Carlo simulation, and calculated results for the Si device are compared to published experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342988
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Theory of the velocity-field relation in AlGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5004-5008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present ensemble Monte Carlo calculations of the steady-state electron drift velocity as a function of applied electric field in Al0.32 Ga0.68 As. The effect of various material parameters on the calculated velocity is assessed by varying each parameter independently by ±20%. It is found that both the optical phonon energy and intervalley separation energy alter the peak electron velocity greatly. Variations in the dielectric constants and central valley effective mass have little effect upon the peak drift velocity, but act to alter the threshold electric field. It is further found that the threshold electric field is greater in Al0.32Ga0.68As than in GaAs even though the central-to-satellite valley separation energy is less in AlGaAs. The combined effects of a greater central valley effective mass and a larger phonon energy in AlGaAs result in a greater threshold field. Finally, we present sets of material parameters useful in Monte Carlo models for both GaAs and AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Neutron transmutation doping of high-purity InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1129-1132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmutation doping of high-purity n-type InP has been used to identify the photothermal ionization photoconductivity peaks due to Sn donors. The results obtained show that Sn and S donors in InP have the same ionization energy and the same ground-state central cell shifts within a resolution of 0.006 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339724
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron transfer between adjacent channels simulated by ensemble Monte Carlo methods (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2395-2398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transfer of electrons between two channels, which are viewed as constituents of a "generic device'' is studied. A many-particle Monte Carlo model with self-consistent electric fields is used for this analysis. The study has been performed to assess switching speeds associated with various novel devices, such as velocity modulation transistors and dual-channel high-electron mobility transistors. Typical switching time constants for a 1-μm device (0.4-μm gate length) are 3.5 ps for the longitudinal (source-to-drain) switch on, and 0.2 ps for the transport perpendicular to the interfaces between the two channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337956
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Barrier height fluctuations in very small devices due to the discreteness of the dopants (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5178-5180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial fluctuation in barrier heights of a planar-doped barrier due to the discreteness of the acceptors and their statistical distribution has been calculated by solving Poisson's equation in three dimensions. Our model assumes a random distribution of spherical acceptor charges. Nonlinear Thomas–Fermi screening has been used to include the effect of free carriers and to determine their position-dependent concentration. At 4.2 K we find a range in barrier heights of 30 meV for a barrier with an average value of 0.206 eV. The method by which potential fluctuations broaden the energy distribution of ballistic electrons is illustrated by an example.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338293
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo simulations of hot-electron spectroscopy in planar-doped barrier transistors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2125-2128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a microscopic model to study the hot-electron-spectroscopy method which uses GaAs planar-doped barrier transistors. Our simulation is based on the Monte Carlo method and includes the effects of ionized impurity scattering, pair electron-electron scattering, long-range plasmon scattering, and coupled plasmon/phonon scattering. The nonparabolicity of the band structure and the Pauli exclusion principle are also taken into account in the highly doped base region. The numerical results show that the experimental method of Hayes will indeed reflect the overall momentum distribution of injected hot electrons if the planar-doped barriers are "ideal.'' Ideal means that the self-consistent potential (due to conduction electrons and ionized impurities) is well described by the continuum approximation. We demonstrate that potential fluctuations arising from the discrete natue of the charges and reflection of electrons at the base-collector junction make it impossible to obtain the precise distribution function from the experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336349
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6945-6947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study size quantization effects on the conduction band dispersion in GaAs/AlAs quantum wells using a semiempirical tight-binding method. For GaAs well thicknesses between 3 and 11 nm, we find a significant increase of the conduction band mass of up to 50% compared with bulk GaAs. Concomitantly, the confinement reduces the highest achievable group velocities for electrons in the Γ conduction valley of the well by up to 30%. We discuss some of the consequences for quantum-well-based devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321773
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...