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  • Artikel: DFG Deutsche Nationallizenzen  (33)
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  • Artikel: DFG Deutsche Nationallizenzen  (33)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3153-3157 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Five-micron long AlGaAs/GaAs Fabry–Pérot vertical cavities with thin GaAs active regions of two different thicknesses are analyzed both theoretically and experimentally in terms of their optical transmission characteristics, spontaneous radiation patterns, and spontaneous spectral emission characteristics. The effects on spontaneous emission of the precise placement of the GaAs active region and also the thickness of this region, as compared to the emitted wavelength, are demonstrated. The measured results are compared with theoretical calculations which are based on the first-order perturbation field theory presented in an earlier publication. Good agreement is found in the comparison between the theoretical predictions and the experimental results, and indicates the controllable spontaneous emission in these long vertical cavities.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3383-3385 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on modified spontaneous emission rates in quantum dot microcavity arrays. Three-dimensional optical confinement is achieved using apertured microcavities with square aperture sizes varied from 5 to 1 μm on a side. A maximum measured increase in the on-resonance spontaneous emission rate over that off resonance is ∼50%, and we identify this enhancement with apertured modes of the microcavity. Oscillations in the spontaneous emission rate versus wavelength correspond to spectral resonances in the higher order aperture modes. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1598-1600 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Calculated data are presented that compare the control of the lasing wavelength for different dielectric vertical-cavity surface-emitting lasers that use a GaAs tuning layer of variable thickness to control the longitudinal cavity resonance. The advantages of high-contrast Bragg reflectors and a half-wave cavity spacer thickness become obvious in achieving both a wide tuning range and minimizing reflectivity changes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2279-2286 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Experimental data are presented along with calculations which describe the near-threshold transverse modes in AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers with two different Bragg reflector systems. The Bragg reflector systems are composed of either AlAs/GaAs quarter-wave stacks or a combination of AlAs/GaAs and ZnSe/CaF. The temperature dependence of the lasing mode is studied for three different structures, and it is shown that higher-order lasing modes are favored with strong cavity detuning when the cavity resonance exists at a wavelength greater than the bulk emission peak. Important aspects of the lasing behavior are described by calculating the spontaneous mode which occurs at the lasing wavelength. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2564-2566 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2782-2784 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The fabrication and optical mode characteristics of epitaxially regrown vertical-cavity surface-emitting lasers are presented. Modeling suggests that a highly resistive AlGaAs current blocking layer grown at low temperature by molecular beam epitaxy can be used to form an antiguiding structure, and antiguiding effects are observed in 10 μm diameter devices. Additional influence on the optical mode arises due to discontinuities associated with the etch and regrowth. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 214-216 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on the electroluminescence from an ensemble of self-organized quantum dots excited at low current densities. The ensemble contains ∼105 dots, which produce a ground state spectral emission with a 14 K linewidth of ∼1 meV at low current density (∼5×10−2 A/cm2). While the spectra show clearly discrete energy levels, we suggest that obtaining a single ground state emission from the ensemble may be due to interdot electronic coupling. Spectral broadening decreases for decreasing current density due to electronic state filling, even for the lowest current densities studied. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3477-3479 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ring and stripe oxide-confined vertical-cavity surface-emitting lasers are studied. Interesting coupling effects are observed due to the nonzero propagation velocity of the optical mode in the plane of the cavity. The stripe geometries appear interesting due to the very low threshold and provide a convenient means for increasing the aperture size while maintaining uniform current pumping. The ring laser provides a means of obtaining well defined multiple spots in the far field. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3152-3154 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on small area vertical-cavity surface-emitting lasers with lateral sizes ranging from 5 to 1 μm that use both oxide confinement and a high-contrast distributed Bragg reflector as the upper mirror. Optical loss becomes appreciable for device sizes less than 3 μm in diameter, and is analyzed through measurements of threshold, differential output efficiency, and the far-field radiation patterns. The results suggest that loss of optical confinement occurs for thin apertures and small device sizes. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1948-1950 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented demonstrating that an exposed AlAs layer can be sealed against further decomposition as would otherwise occur due to, for example, wet oxidation. A critical processing step consists of a brief 500–600 °C anneal in forming gas of a previously room ambient exposed AlGaAs surface. In the brief high-temperature anneal, a thin but dense surface barrier layer forms which further blocks diffusing oxygen species. The effectiveness of the surface layer as a barrier is demonstrated through its use as a mask against wet oxidation in the fabrication of an all-epitaxial selectively oxidized multimode AlAs/AlGaAs vertical-cavity laser. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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