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  • Articles: DFG German National Licenses  (27)
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  • Articles: DFG German National Licenses  (27)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7265-7268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman scattering by longitudinal-optical (LO) phonon-plasmon-coupled (LOPC) mode in carbon-doped p-type InGaAs with indium composition x≈0.3 and hole concentration from 1017 to 1019 cm−3 grown by metalorganic molecular beam epitaxy was studied experimentally. Only one LOPC mode appears between the GaAs-like and InAs-like LO modes was observed. The peak position of the LOPC mode is near the GaAs-like transverse-optical mode frequency and is insensitive to the hole concentration. The linewidth and intensity of the LOPC mode are dependent strongly on the carrier concentration, while the two LO modes decrease and become invisible under the high doping level. It was shown that the plasmon damping effect plays a dominant role in Raman scattering by LOPC mode for the p-type InGaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360440
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlattices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2597-2602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe and ZnTe thin films and ZnSe-ZnTe strained-layer superlattices (SLS) have been successfully grown by atomic layer epitaxy (ALE) using molecular-beam epitaxy. The ALE growth of ZnSe and ZnTe was achieved at substrate temperatures between 250 and 350 °C and between 240 and 280 °C, respectively. The Zn, Se, and Te beam intensities necessary to achieve ALE growth were evaluated. Under optimum growth conditions, the surfaces of ZnSe and ZnTe thin films were very specular without any surface structure. Modulation-doped n-type SLSs have been prepared by ALE using Cl as a n-type dopant. The carrier concentration of superlattices grown by ALE (3.8×1016 cm−3) was three orders of magnitude higher than those of superlattices grown by conventional molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344225
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3975-3979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type GaAs with doping levels of up to 5.8×1020 cm−3 has been grown by metalorganic molecular-beam epitaxy (MOMBE) using carbon (C) as a dopant. The mobility and minority-carrier diffusion length of the C-doped MOMBE layers were comparable to those of Be-doped MBE layers. The diffusion coefficient of C at 900 °C was estimated to be 6×10−15 cm2 /s which is about two orders of magnitude less than that of Be (1×10−12 cm2 /s). In addition, the lattice constant of C-doped GaAs was found to be 5.6533 A(ring) which completely matches that of the substrate, while the lattice constant of Be-doped GaAs decreases to 5.6467 A(ring) at a doping level of 2×1020 cm−3 as reported by Lievin et al. [Inst. Phys. Conf. Ser. No. 79, 595 (1985)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341356
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  • 4
    Electronic Resource
    Electronic Resource
    Plasma-assisted metalorganic chemical vapor deposition of ZnSe films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2216-2221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe thin films were grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). Plasma-assisted MOCVD is a technique combining rf glow discharge decomposition (at 13.56 MHz) with conventional metalorganic chemical vapor deposition. This process may offer several advantages such as low-temperature growth, high chemical reactivity, cleaning effect of substrate surface, and good surface morphology. The metalorganic sources used were diethylzinc and diethylselenide. The epitaxial films were obtained at the low substrate temperature of 250 °C by plasma-assisted MOCVD. The grown films showed excellent surface morphology and uniformity over a large area. These films were applied to Al/ZnSe:Mn/ITO (indium tin oxide) dc-operated electroluminescent cells. As a manganese source, di-π-cyclopentadienyl manganese [(C5H5)2Mn] was successfully used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336362
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  • 5
    Electronic Resource
    Electronic Resource
    Highly conductive and wide band gap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1427-1431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped hydrogenated amorphous-microcrystalline mixed-phase silicon (μc-Si:H) films were prepared by the mercury photosensitized decomposition of a disilane-hydrogen gas mixture, by adding phosphine and diborane for n and p type, respectively. The maximum dark conductivity and optical band gap of the films were, respectively, 20 S cm−1 and ∼2.0 eV for n type, and 1 S cm−1 and 2.3 eV for p type. It is most significant that the gaseous ratio of hydrogen to disilane should be enhanced up to 70 for n type, and even 300 for p type, to obtain such a highly conductive and wide gap film. The crystallinity of the photodeposited μc-Si films appeared to be improved in comparison with that of films by conventional plasma glow discharge technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336071
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1015-1022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices (SLSs) were examined by means of transmission electron microscopy and Raman scattering. Superlattice structures were confirmed from both transmission electron diffraction patterns and bright field images of the samples. Lattice distortions which originated from misfit strains were observed by the lattice image mode. The crystallinity of the adjacent layers was degraded when the layer thickness became large and polycrystalline structures were observed when the layer thickness exceeded the critical layer thickness. Raman scattering was used to assess the magnitude of the strain in the SLSs. Optical phonon frequencies of the components in SLSs were different from those frequencies of the bulk materials. The frequency shifts were used to quantify the strains in the SLSs. The observed shifts corresponded to the calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338191
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  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic molecular-beam epitaxy of ZnSe and ZnS (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1251-1256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic molecular-beam epitaxial growth of ZnSe and ZnS on (100) GaAs has been demonstrated and characterized. Diethylzinc and diethylselenide were used for the ZnSe growth, while for the ZnS growth both hydrogen sulfide and diethylsulfide (DES) were tested as sulfur sources. The dependence of the growth rate on various growth conditions was investigated to clarify the growth mechanism. When group VI alkyls were used as sources, pyrolysis in a cracking cell was required, unlike metalorganic chemical vapor deposition. Interesting differences in growth kinetics and in crystallinity between H2S-based and DES-based ZnS have been found. Photoluminescence spectra of ZnSe layers measured at 4.2 K showed resolved exciton emissions. However, donor-acceptor pair emission lines attributed to a Li acceptor (LiZn) were also observed. Smooth, monocrystalline ZnS layers could be grown at substrate temperatures above 250 °C by using cracked H2S and DES, and above 150 °C by using uncracked H2S. Photoluminescence spectra of ZnS layers at 74 K were dominated by unidentified blue emissions. These good results reflect the complete absence of a premature reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339677
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 773-778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of ZnSe–ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337428
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 793-796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe thin films were grown on (100) and (111) oriented Si substrates by molecular beam epitaxy. The single-crystalline ZnSe films were obtained in the substrate temperature range of 300–450 °C. The epitaxial layers were evaluated by reflection high-energy electron diffraction, x-ray diffraction, etch pit density, photoluminescence, and Hall effect measurements. Etch pit density was estimated to be 3×105 cm−2. The carrier concentration and electron mobility of the epitaxial ZnSe layers at room temperature are 1.3×1017–2.8×1017 cm−3 and 170–250 cm2/V s, respectively. These epitaxial films were applied to Au/ZnSe:Mn/Si dc-operated electroluminescent cells. The maximum quantum efficiency of 2.2×10−2 (30.4 V, 6.3×10−5 A/cm2) was achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336197
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  • 10
    Electronic Resource
    Electronic Resource
    Modulation-doped ZnSe:Mn dc thin-film electroluminescent devices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4706-4710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by molecular beam growth: a Au/ZnSe:Mn/GaAs cell with a single-crystal ZnSe:Mn host layer and an Al/ZnSe:Mn/ITO cell with a polycrystal ZnSe:Mn host layer. Modulation doping was used to investigate the active region in the ZnSe:Mn layer. It was found that threshold voltage characteristics of the Au/ZnSe:Mn/GaAs cell were influenced by the Mn doping position in the ZnSe host layer, but in the Al/ZnSe:Mn/ITO cell, there was no dependence of threshold voltage on the Mn doping position. The dependence of luminescence intensity-injection current characteristics on the Mn doping position showed that the excitation probability of Mn luminescence centers by injected electrons increased in the region close to the negative electrode for both types of EL cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335331
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