Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 527-529 (Oct. 2006), p. 1553-1556
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
We report on the fabrication and testing of GaN resistive gas sensors for hydrogendetection. The Si-doped n-type GaN was grown by organometallic vapor phase epitaxy (OMVPE)on c-plane sapphire substrates. The device structure is simply a pair of metal ohmic contact pads.The sensors are sensitive to H2 gas over a wide range of concentration: the lowest concentrationtested being ~0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of thesignal is observed up to 100% H2 flow. In the continuous operation mode with varying H2concentration, a clear and sharp response was recorded with no memory effects during ramping upand down cycles of H2 concentration. The change in current at a fixed voltage to hydrogen wasfound to change with sensor geometry. The possible gas sensing mechanisms are still underinvestigation
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1553.pdf
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