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  • Articles: DFG German National Licenses  (42)
  • 1
    Electronic Resource
    Electronic Resource
    Magnetoresistance and magnetization oscillations in Fe/Cr/Fe trilayers : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6604-6606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 2-ML (monolayer) oscillation period has been observed in the magnetization as well as in the magnetoresistance of Fe/Cr/Fe trilayers. Kerr effect measurements were performed in order to verify the periodicity and determine the kind of the coupling between the Fe layers. The magnetoresistance loops show characteristic steps at magnetic field values at which the size of the magnetization changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358207
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropy of the upper critical field in the magnetic heavy-fermion superconductor URu2Si2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3414-3416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements have been performed of the upper critical field Hc2 anisotropy in the magnetic heavy-fermion superconductor URu2Si2. The dHc2/dT value is constant within 5% when H is rotated in the basal plane, whereas ||dHc2/dT|| decreases by about 35% for H rotated by 20°–30° out of the basal plane. Contrary to CeCu2Si2 the Hc2 anisotropy in URu2Si2 is enhanced as temperature decreases below Tc. This disparity can be attributed to the different strengths of paramagnetic and spin-orbit effects responsible for the suppression of superconductivity by a magnetic field in CeCu2Si2 and URu2Si2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340750
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  • 3
    Electronic Resource
    Electronic Resource
    Structural characterization of periodic arrays of magnetic dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4216-4222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structure and regularity of macroscopically large arrays of submicron magnetic Au/Co/Au dots, which were prepared by combining electron beam lithography, molecular beam epitaxy, and lift-off techniques. Atomic force microscopy was used to characterize the surface roughness of the dots and to show the reproducibility of dot size and periodicity over large areas; low-angle x-ray diffuse scattering experiments were employed to construct a mapping of the reciprocal space in the vicinity of the (000) reflection of the dots. The reciprocal space mapping thus provides information about the internal structure of the dots, as well as about the lateral periodicity of the dot array. This work underlines the important complementarity of scanning probe and x-ray diffraction techniques for the detailed characterization of patterned structures. We observed that the x-ray diffraction patterns are extremely sensitive to the orientation of the dot lattice with respect to the incoming x-ray beam, allowing a quantitative analysis of the lateral periodicity of the dot array and the size of the individual dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373055
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1429-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the thickness dependent properties of manganite films characterized by colossal negative magnetoresistance. Ultrathin, wedge-type films (0–120 Å) of La0.7Ba0.3MnO3 were deposited by laser ablation onto SrTiO3 and LaAlO3 substrates. The films were patterned into strips of different thickness and magneto-transport measurements were performed at temperatures between 5 and 290 K and in magnetic fields up to 5 T. Atomic force- and transmission electron microscopy were done to correlate the microstructure with the transport data. The resistivity of the films increases slightly with decreasing thickness due to substrate-induced compressive strain. Below 50 Å, the resistivity rises abruptly indicating a crossover to discontinuous and finally island-like film growth as confirmed by the microstructural techniques. At thicknesses slightly above the threshold for percolative conduction ((approximate)30 Å), an enhanced low-field magnetoresistance was observed as a signature of spin-dependent tunneling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380217
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  • 5
    Electronic Resource
    Electronic Resource
    Simulation and calibration of an open inductive sensor for pulsed field magnetization measurements (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2708-2710 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The relation between the voltage induced in an open sensor and the magnetic moment of a sample during pulsed field magnetization measurements has been calculated. The calculation takes into account the size of a sample, its internal flux distribution, and its position with respect to the center of the sensor. It has been found that the behavior of the response signal with respect to the sample position is the same for homogeneously magnetized Ni samples and high temperature superconductors. Because of this universality, it is possible to calibrate the open sensor even in the case of an unfavorable sample geometry. The calculations have been experimentally verified by using Ni samples with different geometries. Our results can easily be extended to samples with an arbitrary local field distribution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149832
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  • 6
    Electronic Resource
    Electronic Resource
    InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2715-2718 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Cross-shaped Hall sensors with high sensitivity and excellent temperature stability were fabricated from quantum wells based on an InAs/Al0.2Ga0.8Sb heterostructure. The layers were grown on semi-insulating GaAs substrates by molecular beam epitaxy. Maximum Hall mobilities of 215 000 cm2/V s with sheet carrier concentrations of 9×1011 cm−2 were measured at 4.2 K for an undoped quantum well structure. These transport properties result in sensitivities as high as 3 T−1 (for voltage drive) and 650 Ω/T (for current drive). Additional Si δ doping in the middle of the InAs quantum well leads to a highly improved temperature stability of the sensitivities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149834
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature flashes in reentrant superconductors and compounds with metal-insulator transition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1298-1299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local heating in reentrant superconductors and compounds with the metal-insulator transition along the track of the high-energy particle is studied. Numerical calculations of temperature flashes in VO2 are carried out. Possible applications of this phenomenon in the detectors of the particles are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101895
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic-domain-controlled vortex pinning in a superconductor/ferromagnet bilayer (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 322-324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vortex pinning in a type-II superconducting Pb film covering a Co/Pt multilayer with perpendicular magnetic anisotropy is investigated. Different stable magnetic-domain patterns like band and bubble domains can be created in the Co/Pt multilayer, clearly influencing the vortex pinning in the superconducting Pb layer. The most effective pinning is observed for the bubble domain state. We demonstrate that the pinning properties of the superconductor/ferromagnet bilayer can be controlled by tuning the size, density, and magnetization direction of the bubbles. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492317
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  • 9
    Electronic Resource
    Electronic Resource
    Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.0±0.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature photoluminescence measurements in zero magnetic field are used to show that, in each case, only one layer of dots is occupied by an electron, and imply that when the amount of InP in both layers is the same, the dots in the upper layer are larger. High-field photoluminescence data reveal that the position and extent of the hole wave function are strongly dependent on the amount of InP in the stack. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383807
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetophotoluminescence of stacked self-assembled InP quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 799-801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report magnetophotoluminescence measurements of stacked layers of self-assembled InP quantum dots. With a magnetic field applied in the growth direction we have determined the exciton reduced mass from the field dependence of the photoluminescence energy. By applying a magnetic field perpendicular to the growth direction, we have analyzed the spatial confinement of the dots in the growth direction. We observe a large increase in the shift of the exciton energy between 0 and 50 T when the thickness of the GaInP spacer layer between the dots is reduced from 8 to 4 nm. This indicates a decrease in spatial confinement in the growth direction which we attribute to strong electronic coupling between vertically stacked dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124517
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