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  • 1
    Electronic Resource
    Electronic Resource
    Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 54 (Sept. 2008), p. 216-222 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: The phenomenal growths of information technology and related fields have warranted thedevelopment of new class of materials. Multifunctional oxides, magnetic-semiconductors, multiferroicsand smart materials are just a few examples of such materials. They are needed for thedevelopment of novel technologies such as spintronics, magneto-electronics, radhard electronics, andadvanced microelectronics. For these technologies, of particular interest are some solid solutions ofilmenite-hematite (IH) represented by (1-x) FeTiO3.xFe2O3 where x varies from 0 to 1; Mn-dopedilmenite (Mn+3-FeTiO3) and Mn-doped pseudobrookite, Mn+3-Fe2TiO5(PsB). These multifunctional oxides are ferromagnetic with the magnetic Curie points well above theroom temperature as well as wide bandgap semiconductors with band gap Eg 〉 2.5 eV. This paperoutlines: (a) processing of device quality samples for structural, electrical and magneticcharacterization, (b) fabrication and evaluation of an integrated structure for controlled magneticswitching, and (c) the response of the two terminal non-linear current-voltage (I-V) characteristicswhen biased by a dc voltage. Subsequently, we will identify a few microelectronic applications basedon this class of oxides
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.216.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    The superconducting proximity effect in Nb/Fe multilayers
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 235-240 (1994), S. 3295-3296 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(94)91174-6
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 300-308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that depositing Ta diffusion barriers under ultra-high vacuum conditions without in situ oxygen dosing allows for variations both in microstructure and in the concentration of chemical impurities that severely degrade barrier performance. The effects of deposition pressure, in situ oxygen dosing at interfaces, hydrogen and oxygen contamination, and microstructure on diffusion barrier performance to Cu diffusion for electron-beam deposited Ta are presented. 20 nm of Ta diffusion barrier followed by a 150 nm Cu conductor were deposited under ultra-high vacuum (UHV, deposition pressure of 1×10−9 to 5 ×10−8 Torr) and high vacuum (HV, deposition pressure of 1×10−7 to 5×10−6 Torr) conditions onto 〈100〉 Si. In situ resistance furnace measurements, Auger compositional depth profiling, secondary ion mass spectrometry, and forward recoil detection along with scanning and transmission electron microscopy were used to determine the electrical, chemical, and structural changes that occurred in thin-film Ta diffusion barriers upon annealing. Undosed HV deposited Ta barriers failed from 560 to 630 °C, while undosed UHV barriers failed from 310 to 630 °C. For UHV Ta barriers, in situ oxygen dosing during deposition at the Cu/Ta interface increased the failure temperatures by 30–250 °C and decreased the range of failure temperatures to 570–630 °C. Undosed UHV Ta barriers have no systematic relationship between failure temperature and deposition pressure, although correlations between breakdown temperature, oxygen and hydrogen concentrations, and microstructural variations were measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353904
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in Fe/Cr superlattices with very thin Fe layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3500-3502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carefully tailored Fe/Cr epitaxial superlattices with extremely thin Fe layers have been grown on MgO(100) by molecular beam epitaxy. The low-angle x-ray spectra reveal the presence of sharp interfaces down to an Fe layer thickness of a few monolayers. An [Fe(4.5 A(ring))/Cr(12 A(ring))]50 superlattice shows a 220% magnetoresistance at 1.5 K, and a saturation field of 110 kOe. A further decrease of the Fe layer thickness produces a drastic decrease in the magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111253
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetoresistance and magnetization oscillations in Fe/Cr/Fe trilayers : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6604-6606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 2-ML (monolayer) oscillation period has been observed in the magnetization as well as in the magnetoresistance of Fe/Cr/Fe trilayers. Kerr effect measurements were performed in order to verify the periodicity and determine the kind of the coupling between the Fe layers. The magnetoresistance loops show characteristic steps at magnetic field values at which the size of the magnetization changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358207
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and giant magnetoresistance in sputtered and MBE grown Fe/Cr superlattices (invited) (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7079-7079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a comparative study of Fe/Cr superlattices prepared by sputtering and molecular beam epitaxy. Detailed structural and magnetic measurements show that structural parameters are important in controlling the magnitude of the magnetoresistance. X-ray diffraction results show that films grown by molecular beam epitaxy (MBE) and sputtering are structurally different, and corresponding to these differences are large changes in the values of the magnetoresistance and its dependence on Cr thickness. The results indicate a strong dependence of the magnetoresistance on the structure of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356732
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  • 7
    Electronic Resource
    Electronic Resource
    Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6589-6591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (〈0.1 μm) and/or the Be+ dose is high (〉1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm−2 ) Be-implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a 〉900 °C/2 s RTA is electrically active.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345093
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of defect density measurements in magnetic tunnel junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6662-6664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. The quality of the insulating layers of these devices must be analyzed. We use electrodeposition to decorate pinholes and analyze the density of pinholes and pinhole precursors. Electrical breakdown measurements can also be performed on magnetic tunnel junctions to predict the probability of such devices failing. We discuss both experimental methods and compare the results obtained. It is observed that the two methods yield the same results for the areal defect density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356711
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  • 9
    Electronic Resource
    Electronic Resource
    Interface composition in magnetic tunnel junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6659-6661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance of magnetic tunnel junctions critically depends on the exact composition at the interfaces. As such the completeness of the oxidation process of the Al layer (used to produce Al2O3-based tunnel junctions) plays an essential role in the magnetoresistance. We studied the chemical properties of ferromagnet/Al2O3 interfaces as a function of original Al layer thickness. We have studied the concentrations of elementary and oxidized Al, Co, Ni, and Fe for varying roughness of the ferromagnetic layer. The oxidation process critically depends on the roughness of the underlying ferromagnetic (FM) layer. Al layers grown onto smooth FM layers oxidize homogeneously whereas Al layers grown on rough FM layers show a complicated oxidation behavior. Within the sensitivity of the analysis technique, we did not observe oxidation of the ferromagnetic layers, even for the overoxidized part of the samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356710
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  • 10
    Electronic Resource
    Electronic Resource
    Pinhole imaging in magnetic tunnel junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5188-5190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junctions may experience failure due to local short cuts in the insulating layer of such devices. The thicknesses of the insulating layers need to be reduced, which will likely make this problem more prevalent. To develop low resistance magnetic tunnel junctions, the density of pinholes must be analyzed. Using the electrodeposition of copper, we have developed a method for the imaging of pinholes. With the selective nucleation of copper at pinhole sites, structures are formed which can be visualized by conventional microscopy techniques. The potential applied for electrodeposition might cause dielectric breakdown of weak spots in the insulator layer. Variation of the applied voltage will allow identification of such sources of device failure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373290
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