Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of gettering in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5858-5864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two basic functions of getters in silicon during gettering processes are investigated in detail. The sink action of getters for absorbing impurities is described by a gettering parameter g, which relates to the diffusion ratio gd, segregation coefficient S, and the activation energies Em,Si, Em,G of impurities in intrinsic Si and in the getter phase. The kickout mechanism is suggested for describing the diffusion of impurities because of the contribution of Si interstitials to kick out the impurities to be gettered. Based on the interaction of Si interstitials with impurities and the influence of the sink in absorbing impurities, a set of gettering equations is derived and used to calculate the gettering of gold in silicon with back surface getters. Theoretical results agree well with reported experimental data and five conclusions are provided to determine the optimal gettering conditions for a given gettering cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350482
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Deep levels introduced into silicon during hydrogen plasma annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5275-5278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the introduction of deep energy levels into silicon following a hydrogen plasma anneal at 300 °C for 3 h. The wafers were heat treated prior to the hydrogen anneal to cause oxygen to precipitate using a three-cycle high-low-high anneal. The deep level impurity concentrations generally exhibited a decreasing density into the wafer, indicative of damage originating from the surface. These findings are in contrast to other reported hydrogen plasma anneal results which generally show a reduction of deep level concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335270
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Deep-level impurities in edge-defined film-fed-growth silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 801-810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed-growth (EFG) Si is investigated using deep-level transient spectroscopy and surface photovoltage. An impurity energy level of CrB was found at 0.27 eV above the valence band in EFG Si contaminated with Cr. The Cr diffusion coefficient in EFG Si was obtained as 2×10−17 cm2/s at room temperature using association and dissociation of CrB pairs after a 210 °C dissociation anneal. Most of the deep-level transient spectroscopy (DLTS) spectra are not analyzable with conventional methods due to abnormally broad peaks. DLTS spectra of as-grown EFG Si are modeled using a Gaussian distribution of impurity energy states. The simulated DLTS peaks agree well with measured data explaining the origin of the deep-level impurities of EFG Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360338
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    In situ gettering of edge-defined film-fed growth silicon in a CO ambient (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 371-377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed growth (EFG) Si grown with carbon monoxide (CO) added to the Ar ambient during crystal growth yields solar cells with higher efficiencies than when grown without CO. This increase in cell efficiency is not fully understood. Surface photovoltage, deep-level transient spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, and transmission electron microscopy were used to determine the minority carrier diffusion lengths, impurity distributions, and defect structures in uncontaminated, Cr contaminated, and V contaminated EFG material grown with and without CO added to the Ar ambient. We conclude that "SiC-like'' complexes in the near-surface region of the CO ambient material act as gettering sites during crystal growth, and that this gettering action results in lower bulk impurity levels and higher solar cell efficiencies. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359332
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    The effects of gas ambients on the formation of surface and bulk defects in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6673-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of gas ambients on the density of oxide precipitates and stacking faults have been studied in samples annealed in various gas ambients. It is found that the densities of oxide precipitates and bulk and surface stacking faults in oxynitrided samples are higher than those of samples annealed in oxygen, nitrogen, trichloroethane plus oxygen, and pure ammonia. Also, stacking faults have been observed at the surface of the samples annealed in an ammonia ambient. These observations are contrary to our expectations, and several models are proposed to explain the phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342022
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Number of oxygen atoms in a thermal donor in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 136-141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of oxygen atoms in a thermal donor (TD) can be determined directly from the reduction of the concentration of interstitial oxygen in Czochralski (Cz) silicon after annealing at 450 °C for 75 h, when the effect of high-carbon concentration in Si crystals is considered. It is found that on the average a single TD cluster contains eight oxygen atoms. Some TD-inactive large oxygen clusters are produced if the annealing time is longer than the time for TDs to reach their maximum concentration or if the annealing temperature is higher than 475 °C. We also find that the smallest TD cluster contains five oxygen atoms and the largest TD cluster contains 13 oxygen atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340481
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Gettering in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2974-2985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals. We also find from P diffusion, Ar ion implantation, and Ni film gettering performed as a function of temperature, there exists an optimum gettering temperature. From a comprehensive discussion of the existing models, we conclude that neither the enhanced metal solubility nor the silicon interstitial model explains our experimental results. Furthermore, it is shown that generation of dislocations is not a prerequisite for effective gettering. A model, based on the segregation of impurities at high temperatures and on the release/diffusion of metallic impurities at lower temperatures, is proposed to explain all of our results. A general form of the segregation coefficient has been developed using an extended concept of solid solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342714
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Model potential calculation of the thermal donor energy spectrum in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5761-5765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-parameter model potential originally proposed by Ning and Sah [Phys. Rev. B 4, 3468 (1971)] for calculating the ground-state energies of group V and group VI impurities in silicon is extended to the variational calculation of the thermal donor ionization energies. In the multivalley effective mass approximation, the theoretical results are in excellent agreement with the reported experimental data. This provides additional evidence for the assumption that thermal donors consist of five to thirteen oxygen atoms, as first proposed by Ourmazd, Schröter, and Bourret [J. Appl. Phys. 56, 1670 (1984)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340315
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Recombination properties of oxygen-precipitated silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2476-2487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that recombination lifetimes are significantly degraded in oxygen-precipitated silicon. The possible sources for lifetime degradation are expected to be oxygen precipitates (OP's), dislocation loops, stacking faults, and point defects associated with self-interstitials generated during the oxygen precipitation process. From the results of an extensive experimental study using IR absorption, TEM, DLTS, and SPV (surface photovoltage), we have found that OP's are mainly responsible for the observed lifetime degradation and that recombination at OP's takes place through Si/OP interface states. In addition we have observed that the lifetime degradation is more severe in p-Si than in n-Si even for identical densities and sizes of OP's. A model for recombination at OP's is presented in terms of the surface recombination velocity at the Si/OP interface and their average density and size. To explain the lifetime difference between n-Si and p-Si we propose a band bending around OP's caused by positive fixed charges in the OP's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336993
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Degradation of ultrathin oxides by iron contamination (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2645-2647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-contaminated oxides of metal-oxide-semiconductor devices were investigated to study gate oxide integrity (GOI) degradation dependence on oxide thickness for oxide thicknesses from 3 to 5 nm and iron densities from 4×1010 to 1.4×1012 cm−3. In contrast to other publications, we show that oxides as thin as 3 nm show gate oxide integrity degradation, especially for the higher iron densities. But even for the low iron density we observe GOI degradation for all oxides. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410363
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...