Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 2261-2264
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372170
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