Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6223-6227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure of stacking faults formed in pairs in a ZnSe epitaxial layer grown by gas source molecular beam epitaxy on a GaAs(001) buffer layer was determined with transmission electron microscopy. Extrinsic type stacking faults were formed on (111) and (1¯1¯1) planes with the same polarity, which was determined by convergent-beam electron diffraction. The two stacking faults meet at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations at the edge of the stacking faults were found to be the Shockley type ones with a Burgers vector of 1/6〈211〉. Probable formation processes of the stacking faults have been discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359152
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3352-3358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369683
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of the environmental degradation in Ba2YCu3O7−y (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5283-5288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Ba2YCu3O7−y high Tc superconductor degrades with time in air. In this paper we discuss the early stage of the degradation from a microscopic standpoint by using transmission electron microscopy (TEM). It has been shown by a high resolution TEM that the degradation has two modes. One is the formation of amorphous and polycrystalline phases, the latter of which are perhaps BaCO3. It has been clarified that the origin of the formation of the amorphous and polycrystalline phases is the reaction of Ba2YCu3O7−y phase with the water vapor, and the polycrystalline phase is formed sequentially after the formation of the amorphous phase. The other is the formation of planar defects which are introduced between Ba-O and Ba-O layers even in dry air. It is thought that the planar defects are formed to relax the strain energy of the dislocation caused by the migration of ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347045
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Impact ionization rates of holes in AlxGa1−xSb (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2169-2172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses the impact ionization rates of holes in AlxGa1−xSb near x=0.06, where resonance impact ionization is expected. Resonance impact ionization did not occur in a range of the electric field we studied. We evaluate the impact ionization of holes at the spin-split-off band theoretically, and show that our measured result is reasonable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349455
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Analysis of multimode microwaves in oversize waveguide using an infrared camera image of radiated power distribution (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3075-3081 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method of mode analysis of multimode microwaves in an oversize waveguide is developed which utilizes infrared camera images of the radiation profile of microwaves launched from the waveguide end. Systematic variations of the radiation pattern with different phase shifts among constituent modes are compared with theoretical predictions to identify the constituent modes and to determine their fraction of power. Characteristics of a step-wise modulated TE02–TE01 mode converter are examined by using this method. It is demonstrated that this method is useful as a practical means for on-site analysis of waveguide properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142156
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Analysis and optimization of stepwise modulated TEon mode converter (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 178-188 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper reports numerical and experimental analyses of a stepwise modulated TEon mode converter based on the mode-matching formulation. By systematic analyses, the dimensions of the TE02 to TE01 converter at 41 GHz are optimized so that a power conversion efficiency higher than 99.3% is theoretically obtained with a reflection coefficient less than 0.2%. The simple structure of the converter not only allows easy manufacturing with ordinary machining but it also enables the converter characteristics to behave well and be readily adjusted on the laboratory site. Based on the numerical analyses, a mode converter is designed and fabricated for use in the ECRH experiment on the GAMMA 10 tandem mirror. Preliminary tests show that the converter works well at a high power, above 100 kW. The transmittable power is limited by external nonaxisymmetric modes which can eventually be suppressed with efficient mode filters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142302
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Impedance matching for enhanced waveguide/photodetector integration (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2712-2714 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel impedance-matched structure is proposed for improved coupling in evanescently coupled, integrated waveguide/photodetectors. We show that insertion of an impedance-matching layer between waveguide and detector regions can improve the coupling by a factor of ≈7, resulting in shorter detectors with lower capacitance and higher frequency response. The impedance-matching mechanism is discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101933
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 16-17 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100822
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Measurement of the impact ionization rates in Al0.06Ga0.94Sb (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 249-251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured impact ionization rates in AlxGa1−xSb at x=0.06, where the band-gap energy Eg equals the spin-orbital splitting energy Δ, in an electric field of 1.5×105–3.2×105 V/cm. By considering exact field profile in the depletion layer for each sample, the ionization rates of AlxGa1−xSb have been determined to be α=2.35×106 exp(−1.30×106/E) and β=9.02×105 exp(−9.03×105/E). Although our data have not shown the resonant enhancement of hole ionization rates described by O. Hildebrand, W. Kuebart, and M. Pilkuhn [Appl. Phys. Lett. 37, 801 (1980)], exact values of impact ionization rates have been established in practical electric fields required for designing AlxGa1−xSb avalanche photodiodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103705
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Integrated waveguide/photodiodes using vertical impedance matching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1737-1739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel "vertical impedance matching'' approach is demonstrated to improve absorption in evanescently coupled, integrated waveguide/photodiodes by 500% over conventional structures. Our devices exhibit both high absorption at short length (90% at 190 μm) and efficient fiber butt coupling (42%) at 1.3–1.55 μm wavelengths. Unusual transient phenomena are observed in such impedance-matched devices and discussed theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103084
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...