Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Determination of surface roughness of InP (001) wafers by x-ray scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Strain relaxation of GaNxAs1−x on GaAs (001) grown by molecular-beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5302-5304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of samples consisting of a strained layer of GaNxAs1−x of different thickness, covered by a GaAs cap layer of 100 nm were grown by molecular-beam epitaxy. The samples have been characterized by high-resolution x-ray diffraction and simulations based on the dynamical theory in order to determine the strain relaxation in GaNxAs1−x layers. It is found that there is a huge difference between the critical thickness determined by x-ray diffraction and the theoretical calculations according to the Matthews and Blakeslee model. The critical thickness of GaNxAs1−x on GaAs is ten times smaller than the theoretical value. The strain relaxation is a crucial point that affects the quality of GaNAs. Photoluminescence measurements are in good agreement with the x-ray diffraction results. The optical properties degraded rapidly when the GaNxAs1−x thickness exceeded the critical thickness determined above. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371516
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288779
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Atomic structure at the LaSi2−x/Si(100) interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces between Si(100) and LaSi2−x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high-resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2−x unit cell points to the 〈332〉Si direction. A model suggesting the {100} planes of LaSi2−x grown on a {113}Si surface has been put forward to account for the observed tilting growth of LaSi2−x disilicide on the Si(100) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104235
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3076-3078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 Ω−1 cm−1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370540
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Cubic-phase GaN light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2498-2500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123019
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1147-1149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An (AlAs/GaAs/AlAs/AlGaAs)/GaAs(001) double-barrier superlattice grown by molecular beam epitaxy (MBE) is studied by combining synchrotron radiation and double-crystal x-ray diffraction (DCD). The intensity of satellite peaks is modulated by the wave function of each sublayer in one superlattice period. Simulated by the x-ray dynamical diffraction theory, it is discovered that the intensity of the satellite peaks situated near the modulating wave node point of each sublayer is very sensitive to the variation of the layer structural parameters. The accurate layer thickness of each sublayer is obtained with an error less than 1 A(ring). Furthermore, x-ray kinematical diffraction theory is used to explain the modulation phenomenon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115705
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Significantly enhanced flux pinning in the Bi-substituted TlBa2Ca2Cu3Oy system (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2370-2372 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that substitution of bismuth into the TlBa2Ca2Cu3O9 system leads to a high temperature superconductor with significantly greater low temperature flux pinning than that of the other copper oxide superconductors. Bi substitutes at the Tl site up to 20 at. %. The superconducting transition temperature Tc increases from 110 K for x=0.0 to 116 K for x=0.2. Scanning electron microscope (SEM) images reveal a platelike morphology which is highly suitable for powder-in-tube processing. The magnetization–hysteresis loop shows that the Bi-substituted phase has significantly better low temperature flux pinning properties than the pristine Tl cuprate, and exhibits only a weak dependence on temperature and field when compared to that of unsubstituted phase. However, at 77 K the compound has lower Jc, determined magnetically, compared to that of the (Tl,Pb,Bi)Sr1.6Ba0.4Ca2Cu3Oy and Y-123 systems. The enhancement of superconducting properties is attributed to an increased coupling between the CuO2 planes along the c axis. Substitution of 20% of Bi in TlBa2Ca2Cu3O9 makes the compound an excellent choice for magnet wire applications at relatively low temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120030
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Surface scattering of x rays from InP (001) wafers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3317-3319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface scattering of x rays from mechanical-chemical polished InP (001) wafers with sulfur and/or iron doping. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model was proposed to explain the experimental data. The results were also compared with those obtained from crystal truncation rod measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 223-225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1−x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124329
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...