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  • 1
    Electronic Resource
    Electronic Resource
    Effects of hydrogen addition on C44 and ultrasonic attenuation of vanadium single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4337-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Examination was made of ultrasonic attenuation α44 and elastic constant C44 of vanadium single crystals with hydrogen between 4.2 and 220 K, as a function of temperature, hydrogen concentration, frequency, and rates of cooling and heating. Attenuation in the V–H α phase at 210 K increased in proportion to the square of hydrogen concentration, while C44 was linear. At a cooling rate of 3.0 K/min, attenuation of the specimen with 1000 at. ppm H increased below the critical solution temperature and showed a peak. At 0.1 K/min, discontinuous decrease was observed at the temperature. During isothermal annealing below this temperature, attenuation at the higher cooling rate decreased with time in two stages and approached the value for the lower cooling rate. The results are discussed based on ultrasonic double refraction due to the volume array of hydrogens and hydride particles formed under the influence of C44-mode ultrasonic waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363390
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  • 2
    Electronic Resource
    Electronic Resource
    Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three-stage metalorganic chemical vapor deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 874-876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low threshold InGaAsP/InP lasers with planar buried heterostructure were grown entirely by low-pressure metalorganic chemical vapor deposition (MOCVD). The threshold current Ith=10 mA and the differential quantum efficiency ηd =60%, which are comparable to lasers grown by liquid phase epitaxy, were obtained. Most lasers randomly selected from one wafer have threshold currents of Ith=10–25 mA, because of high thickness uniformity of MOCVD growth. Stable fundamental transverse mode operation was also obtained up to an output power of 40 mW/facet, due to controlling the active layer width less than 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98840
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  • 3
    Electronic Resource
    Electronic Resource
    InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar buried heterostructure InGaAsP multiple quantum well (MQW) lasers consisting of six InGaAsP (λg =1.34 μm at room temperature) wells and five InP barriers were prepared by low-pressure metalorganic chemical vapor deposition. The threshold current was 35 mA, and the differential quantum efficiency was 45% at an emission wavelength of 1.3 μm. In the temperature range from −35 to 30 °C, the characteristic temperature was T0=57 K. No significant improvement in T0 was observed in these MQW lasers. However, stable single longitudinal mode operation could be obtained in a wide range of injection current without any mode changes. This effect was considered to be a result of gain narrowing of the MQW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99547
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  • 4
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3-μm planar buried heterostructure lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3684-3688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality InGaAsP and InP layers were obtained with good surface morphology by low-pressure metalorgainic chemical vapor deposition (MOCVD). The growth apparatus could be relatively simple using trimethylindium (TMI) as indium source. Abrupt heterointerfaces were also obtained and the compositional grading at the interfaces was estimated to be less than 20–30 A(ring) owing to the low-pressure growth technique. The selective burying growth on several types of mesas was investigated. The growth rate on the {111}B face was found to be smaller than that on the {111}A and the {100} face in MOCVD. As a result, very smooth and flat varying layers were obtained when the rectangular mesas were formed along the 〈110〉 direction. Using these characteristics, low-threshold 1.3-μm InGaAsP/InP lasers with planar buried heterostructures (PBH) were grown entirely by three-stage MOCVD. The threshold current Ith =10 mA and the differential quantum efficiency ηd =60%, which are comparable to lasers grown by liquid-phase epitaxy, were obtained. PBH lasers with multi-quantum-well active layers were also fabricated. Continuous operation with threshold current Ith =35 mA was achieved at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341411
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  • 5
    Electronic Resource
    Electronic Resource
    Transport superconducting properties of grain boundaries in Tl1Ba2Ca2Cu3Ox thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate weak link properties in the Tl1Ba2Ca2Cu3Ox[Tl-(1223)] system, we measured the transport properties of artificially grown grain boundaries in Tl-(1223) films. Epitaxial thin films were grown on SrTiO3 bicrystal substrates with five tilt angles of 5°, 10°, 15°, 24°, and 36.8°. We found that the grain boundaries Jc (Jcg.b.) of large tilt angles (θ≥15°) at 77 and 5 K were substantially less than intragrain Jc(Jcg) and limited by a weak link. However, the Jcg.b./Jcg values for low tilt angle grain boundaries (θ≤10°) were almost unity. Moreover, magnetic-field history dependent Jc values for low tilt angle grain boundaries were not observed in a low magnetic field (〈0.1 T). These data indicate that the low tilt angle grain boundaries do not work as a weak link and retain high Jc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112227
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  • 6
    Electronic Resource
    Electronic Resource
    Movement of Xanthomonas campestris pv. vitians in the stems of lettuce and seed contamination (2002)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 51 (2002), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Xanthomonas campestris pv. vitians, the causal agent of bacterial leaf spot of lettuce (BLS), can be seedborne, but the mechanism by which the bacteria contaminates and/or infects lettuce seed is not known. In this study, the capacity of X. campestris pv. vitians to enter and translocate within the vascular system of lettuce plants was examined. The stems of 8- to 11-week-old lettuce plants were stab-inoculated, and movement of X. campestris pv. vitians was monitored at various intervals. At 4, 8, 12 and 16 h post-inoculation (hpi), X. campestris pv. vitians was recovered from 2 to 10 cm above (depending on stem length) and 2 cm below the inoculation site. Xanthomonas campestris pv. vitians was also recovered from surface-disinfested stem sections of spray-inoculated plants. Together, these results are consistent with X. campestris pv. vitians invading and moving systemically within the vascular system of lettuce plants. To investigate the mechanism of seed contamination, lettuce plants at the vegetative stage of growth were spray-inoculated with X. campestris pv. vitians and allowed to develop BLS. Seed collected from these plants had a 2% incidence of X. campestris pv. vitians external colonization, but no bacteria were recovered from within the seed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3059.2002.00730.x
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence from mucin core protein expression that some Paget's disease on areola can be of extramammary-like histogenesis and part of multisite disease (2004)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 151 (2004), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Triple extramammary Paget's disease, which consists ordinarily of bilateral axillary and genital lesions, is uncommon. Triple extramammary Paget's disease involving other sites has never been reported, although solitary extramammary Paget's disease can occur at various sites around the body. Erythematous plaques on the areola, axilla and genitalia of a 91-year-old man were surgically removed under the clinical diagnosis of multiple extramammary Paget's disease. Histology revealed that all three lesions consisted of intraepidermal nests of Paget cells and other isolated Paget cells scattered in the epidermis. Although adnexal invasion was observed in the genital lesion, neither intraductal invasion nor underlying breast carcinoma was detected in the areolar lesion. Immunohistochemically, the Paget cells in all lesions expressed simple epithelial cytokeratins (CK8, 18 and 19), mucin (MUC)1 and MUC5AC, but neither CK20 nor MUC2. From the histological findings, the present case was interpreted as triple extramammary Paget's disease rather than synchronous mammary and extramammary Paget's disease. Furthermore, the mucin core protein expression pattern, which was identical to that observed in extramammary Paget's disease, supported the above interpretation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.2004.06087.x
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  • 8
    Electronic Resource
    Electronic Resource
    Microamperometric Estimation of Photosynthesis Inhibition in a Single Algal Protoplast
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 197 (1993), S. 1283-1287 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/bbrc.1993.2616
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray crystallographic study of tetragonal and monoclinic β1-V2H (1986)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 42 (1986), S. 529-533 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768186097756
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  • 10
    Electronic Resource
    Electronic Resource
    The optical writing of MNOS memory with Au deep traps
    Amsterdam : Elsevier
    Solid State Electronics 17 (1974), S. 994-996 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(74)90054-9
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