ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality InGaAsP and InP layers were obtained with good surface morphology by low-pressure metalorgainic chemical vapor deposition (MOCVD). The growth apparatus could be relatively simple using trimethylindium (TMI) as indium source. Abrupt heterointerfaces were also obtained and the compositional grading at the interfaces was estimated to be less than 20–30 A(ring) owing to the low-pressure growth technique. The selective burying growth on several types of mesas was investigated. The growth rate on the {111}B face was found to be smaller than that on the {111}A and the {100} face in MOCVD. As a result, very smooth and flat varying layers were obtained when the rectangular mesas were formed along the 〈110〉 direction. Using these characteristics, low-threshold 1.3-μm InGaAsP/InP lasers with planar buried heterostructures (PBH) were grown entirely by three-stage MOCVD. The threshold current Ith =10 mA and the differential quantum efficiency ηd =60%, which are comparable to lasers grown by liquid-phase epitaxy, were obtained. PBH lasers with multi-quantum-well active layers were also fabricated. Continuous operation with threshold current Ith =35 mA was achieved at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341411
