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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4635-4637 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and crystallographic properties have been investigated for NdCo4M (M=B, Al, and Ga). The temperature dependencies of lattice parameters have been determined between 80 and 730 K by x-ray diffraction. NdCo4B crystallizes in the CeCo4B-type structure, whereas NdCo4M (M=Al and Ga) exhibits a CaCu5-type structure. Magnetic properties of NdCo4B show a clear difference from those of its Al and Ga counterparts. All these compounds exhibit planar anisotropy in the low-temperature regime, and the spin-reorientation temperature is found to be ∼280 K for NdCo4Al and NdCo4Ga, whereas NdCo4B is planar up to its Curie temperature. Thermal expansion curves of c axes show an anomalous contraction for NdCo4B and expansion for NdCo4Al and NdCo4Ga only in the temperature region of planar anisotropy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6418-6420 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Co 3 A(ring)/Pt 10 A(ring))×N (N=8, 16, and 30 bilayers) multilayer thin films were prepared by sputtering onto an 850-A(ring)-thick SiN layer that had been deposited on a silicon (111) substrate. We used the polar Kerr effect to measure the time dependence of magnetization reversal over the temperature range 90–300 K. Direct domain observations were also carried out. The results show that the domain expansion process depends strongly on the number of bilayers. Uniform domain expansion was found only in the thinner samples. From the time dependence of the magnetization reversal measurements over the temperature range 90–300 K, the activation energy and volume associated with domain wall motion were found to be 1.2 eV and 2.3×10−18 cm3 for N=8 sample. The N=16 and N=30 samples seem to have a broad distribution of activation energies. Our observations suggest that both the coercivity and magnetization reversal are controlled by the defects that come from the interface between the Co and Pt.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4624-4626 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystal structure parameter of Cr1−xMxAs (M=Ti, Fe, Co, and Ni; x≤0.1) have been precisely determined as a function of temperature from 77 to 320 K. Discontinuous changes of lattice parameters have been observed at a special temperature. By this temperature the Néel temperatures TN of Cr1−xMxAs have been determined because the anomaly of magnetic susceptibility has not been observed for them. The substitutions by the M atoms generally make TN of CrAs decrease remarkably. For the Fe, Co, and Ni substitutions, a nonmagnetic state is expected for a concentration more than 5%, 6%, and 9%, respectively. Dependence of TN on the substituent concentrations has been determined by taking account of the crystal volume effect on TN.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4847-4850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow-gap shielded magnetoresistive (MR) head with a 8-μm track width has been constructed for high-density magnetic recording. The head consists of a pair of NiFe shields and a trilayered MR element between the shields. In the MR element NiFe, Ti, and amorphous CoZrMo films are used. The thickness of the three layers and the shields, as well as the shield gap length, are optimized with a one-dimensional self-consistent calculation. The shielded MR head has been fabricated using calculated thickness parameters for individual layers: 60 nm for CoZrMo with 40 nm NiFe and 20 nm Ti, 1-μm shields, and 0.5 μm for the total shield gap. The reproduced characteristics from the MR head are evaluated with a plated disk. Neither Barkhausen noise nor distortion is observed in the output waveform. The output voltage is 600 μVpp at a 4 mA/μm sense current with 30 kFCI transition density. The D50 transition density is 40 kFCI. These values are in good agreement with the calculated values. Assuming a 12-μm track pitch, crosstalk is −29 dB from off-track crosstalk characteristics. This shielded MR head has a potential to achieve high recording density with 40 kBPI and 2000 TPI for small-size disk drives.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1368-1376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data of the intrinsic perpendicular magnetic anisotropy energy constant Ku are presented for amorphous rare earth-transition metal (RE-TM) Tbx(FeCo)1−x and multilayered Co/Pt thin film samples. These data were independently measured using five techniques based on torque magnetometry, the extraordinary Hall effect, and the magneto-optic Kerr effect. In the Hall effect measurement, the external field was applied to the sample in three different ways: fixed at 45° from the film normal; rotating around the sample; and fixed along the in-plane direction. The results obtained with these techniques agree with each other for the Co/Pt samples. However, we do find systematic differences in the measured Ku for the Tbx(FeCo)1−x samples. For example, Ku given by the Hall effect and Kerr effect is always larger (by up to a factor of 3) than that given by torque technique. Another interesting fact is that Ku given by the Hall effect technique drops as x approaches the compensation point xc in the TM-dominant case, but increases as x approaches xc in the RE-dominant case. These experimental results are explained by taking into account the canting between RE and TM subnetworks.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data of the intrinsic perpendicular magnetic anisotropy energy constant Ku are presented for amorphous rare-earth–transition metal (RE–TM) Tbx(FeCo)1−x and multilayered Co/Pt thin film samples. These data were independently measured using five techniques based on torque magnetometry, the extraordinary Hall effect, and the magneto-optic Kerr effect. In the Hall effect measurement, the external field was applied to the sample in three different ways: fixed at 45° from the film normal; rotating around the sample; and fixed along the in-plane direction. The results obtained with these techniques agree with each other for the Co/Pt samples. However, we do find systematic differences in the measured Ku for the Tbx(FeCo)1−x samples. For example, Ku given by the Hall effect and Kerr effect is always larger (by up to a factor of 3) than that given by torque technique. Another interesting fact is that Ku given by the Hall effect technique drops as x approaches the compensation point xc in the TM-dominant case, but increases as x approaches xc in the RE-dominant case. These experimental results are explained by taking into account the canting between RE and TM subnetworks.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1041-1043 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acceptor energy level of Be-doped Al0.5In0.5P grown by gas source molecular beam epitaxy has been studied as a function of doping level using temperature-dependent Hall measurements and transmission electron diffraction patterns. Activation energies of acceptors increased from 40 to 170 meV with Be doping levels ranging from 2×1018 to 5×1019 cm−3. The acceptor energy levels were ascribable to the local atomic arrangements on the column III sublattice.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4696-4698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistance of single-crystalline CeAs, CeSb, and CeBi has been measured under hydrostatic pressure. In CeAs and CeSb, pressure enhances the change of overall features in the resistance-temperature R(T) curves. Resistance anomalies associated with magnetic phase transitions are observed and are found to be sensitive to pressure. It is noted that the R(T) curve of CeAs at ∼3 GPa is similar to that of CeSb at ambient pressure.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4816-4817 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure dependence of the magnetic phase transition temperatures of Mn1.8Co0.2Sb were obtained by measuring temperature variation of initial permeability at various pressure. Both the transition temperature (Tt) from antiferromagnetic (AF) to ferrimagnetic (FM) states and the Curie temperature (Tc) increase with increasing pressure. Temperature variations of the lattice parameters of the sample were also measured by using the powder x-ray diffraction method. The discontinuous change of a and c axes and the changes of the thermal expansion coefficients were observed at Tt and Tc, respectively. It is found that the negative exchange striction below Tc and the sign of volume change at Tt are consistent with the results of pressure dependence of Tc and Tt. On the basis of these results, the relation between the effects of alloying and of pressure on the magnetic transitions of Mn2−xCoxSb system is discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 4136-4141 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion vibration gives rise to a new pulsing dipole moment which affects the long-range interaction with the target molecule. This pulsing long-range interaction mechanism has been applied to the proton-transfer reaction NH+3(ν)+NH3→NH2+NH+4 in which the vibrational mode-specific depression of the reaction rate is observed. Significance of the vibrationally induced dipole moment of NH+3(ν) has been clarified in such a way that the origin of the depression is ascribed to the interaction of this pulsing dipole moment with the permanent dipole moment of NH3. The results of calculation agree qualitatively well with the experimental result [Chupka and Russell, J. Chem. Phys. 48, 1527 (1968)].
    Type of Medium: Electronic Resource
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