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  • Electronic Resource  (109)
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  • 1
    Electronic Resource
    Electronic Resource
    Real-time spectroellipsometry investigation of the interaction of silane with a Pd thin film: Formation of palladium silicides (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2535-2542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the application of spectroscopic phase modulated ellipsometry to the study of both ultrafast and slow processes of the interaction of silane (SiH4) with thin films of palladium. Changes of the optical properties of thin films exposed to different SiH4 fluxes are monitored by in situ single wavelength ellipsometry in the case of high fluxes which lead to ultrafast processes and by in situ spectroscopic ellipsometry at low fluxes and slow kinetics. The study of the interaction of SiH4 with Pd at 250 °C reveals the complicated character of the process which depends on the flux of silane and leads to the formation of palladium disilicide, palladium hydrides, and an intrinsic porosity. A qualitative model of the process is proposed. The initial stage of the reaction at high fluxes of SiH4 is dominated by a grain boundary diffusion of SiH4 inside the Pd film, followed by the catalytic decomposition of SiH4 and a strong process of an intrinsic formation of porosity. This fast process (duration of 10 ms) proceeds through the formation of a metastable Pd-rich phase. The appearance of the intrinsic porosity enhances the diffusion of SiH4 inside the Pd film, which results in a drastic acceleration of the silicide formation. At low SiH4 fluxes the characteristic time of the reaction increases up to some tens of minutes and proceeds through the formation of both silicide and palladium hydride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354694
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  • 2
    Electronic Resource
    Electronic Resource
    In situ ellipsometric study of amorphous silicon/amorphous silicon-carbon interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3363-3365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ellipsometric study of the growth of hydrogenated amorphous silicon/hydrogenated amorphous silicon-carbon interfaces and multilayer structures is presented. Kinetic ellipsometry is used at a fixed wavelength to study the growth of the materials at the interface between the a-Si:H and a-Si1−xCx:H layers as a function of the carbon content. It is observed that for samples with carbon content below 36%, the a-SiC:H grows uniformly on top of the a-Si:H. However, as the carbon content is increased beyond this point, the growth of the alloy material becomes nonuniform. Various growth models were used to fit the experimental data and the best fits were obtained using a multilayer model of varying void fraction to describe the inhomogeneous growth. Multilayers were grown using a-Si:H and a-SiC:H. It was observed that for low carbon concentrations (x〈0.36), the successive layers of the multilayer structure are reproducible and the growth remains homogeneous for all the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348534
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  • 3
    Electronic Resource
    Electronic Resource
    In situ spectroellipsometric study of the nucleation and growth of amorphous silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2752-2759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed in situ spectroellipsometric analysis of the nucleation and growth of hydrogenated amorphous silicon (a:Si:H) is presented. Photoelectronic quality a-Si:H films are deposited by plasma-enhanced chemical vapor deposition on smooth metal (NiCr alloy) and crystalline silicon (c-Si) substrates. The deposition of a-Si:H is analyzed from the first monolayer up to a final thickness of 1.2 μm. In order to perform an improved analysis, real time ellipsometric trajectories are recorded, using fixed preparation conditions, at various photon energies ranging from 2.2 to 3.6 eV. The advantage of using such a spectroscopic experimental procedure is underlined. New insights into the nucleation and growth mechanisms of a-Si:H are obtained. The nucleation mechanism on metal and c-Si substrates is very accurately described assuming a columnar microstructural development during the early stage of the growth. Then, as a consequence of the incomplete coalescence of the initial nuclei, a surface roughness at the 10–15 A(ring) scale is identified during the further growth of a-Si:H on both substrates. The bulk a-Si:H grows homogeneously beneath the surface roughness. Finally, an increase of the surface roughness is evidenced during the long term growth of a-Si:H. However, the nature of the substrate influenced the film growth. In particular, the film thickness involved in the nucleation-coalescence phase is found lower in the case of c-Si (67±8 A(ring)) as compared to NiCr (118±22 A(ring)). Likewise films deposited on c-Si present a smaller surface roughness even if thick samples are considered (〉1 μm). More generally, the present study illustrates the capability of in situ spectroellipsometry to precisely analyze fundamental processes in thin-film growth, but also to monitor the preparation of complex structures on a few monolayers scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346452
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  • 4
    Electronic Resource
    Electronic Resource
    In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3364-3369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30–2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346365
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  • 5
    Electronic Resource
    Electronic Resource
    A real time study of the growth of microcrystalline silicon on transparent conducting oxide substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5445-5449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed real time ellipsometry study of the growth of microcrystalline silicon (μc-Si) films on transparent conducting oxide (TCO) substrates is presented. Indium tin oxide and ZnO substrates are compared. μc-Si films prepared either from a high power (SiH4,H2) plasma or by alternating the SiH4 and H2 plasmas (layer-by-layer technique) are considered. Insights into the mechanisms of the TCO/μc-Si interface formation are obtained. A strong chemical reduction of the TCO substrate is observed during the early stage of exposure to the (SiH4,H2) plasma. Then the ellipsometric measurements reveal an induction period of about 1 min before the nucleation of microcrystallites. μc-Si films deposited by the layer-by-layer technique display a different behavior, in particular the chemical interaction at the ZnO/μ-Si interface is not observed in this case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350515
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  • 6
    Electronic Resource
    Electronic Resource
    An in situ ellipsometry study of amorphous silicon/amorphous germanium multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 13-18 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an in-situ ellipsometric study of hydrogenated amorphous silicon(a-Si:H)/hydrogenated amorphous germanium (a-Ge:H) multilayer structures. We deposit multilayers structures with the thickness of the Si layer equal to that of the Ge layer and with thicknesses of 100 and 500 A(ring). We find that whereas the a-Ge:H grown on top of a-Si:H follows a uniform growth model, the initial stage of growth of a-Si:H on a-Ge:H must be modelled with a hemispherical nucleation model. These growth mechanisms are observed for both the case of the 100 A(ring) layers and the 500 A(ring) layers. We also find that there are no long-term effects of the deposition on the optical properties of the layers. This is observable visually in the cases where the thickness of the layers allow the real-time trajectories to reach a saturated value and thus guaranteeing the same starting ellipsometric point for the next layer. This assures us that each material at the beginning of the superlattice growth is the same as that grown at the end. The implication of the present analysis on quantum size effects of superlattices is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347750
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  • 7
    Electronic Resource
    Electronic Resource
    In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measurements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3564-3577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of InAs on InP and InP on GaAs is investigated using reflectance anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three-dimensional growth mode of these materials. A model is proposed to account for the optical properties of the samples, using effective medium theories to describe the roughness. Good quantitative agreement is obtained for small roughness thickness, and a qualitative description is found for larger roughness features. The RA technique is found to be very useful to monitor the growth of lattice-mismatched materials, particularly at the nucleation stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346316
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  • 8
    Electronic Resource
    Electronic Resource
    In situ spectroellipsometry study of the nucleation and growth of microcrystalline silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4894-4898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed in situ spectroellipsometry analysis of the nucleation and growth of μc-Si films deposited on c-Si substrate is presented. The deposition is analyzed up to a final thickness of 0.43 μm. In order to perform a precise analysis, various real-time trajectories recorded at different photon energies are studied. New insights into the growth mechanisms are obtained. The growth of μc-Si is described as an evolution of a dense material and microstructures. The dense phase consists of microcrystallites embedded in an amorphous tissue. The nucleation-coalescence mechanism of μc-Si is compatible with a columnar microstructural development during the early stage of the growth. Then a multilayer model is used to describe the formation of a surface roughness. The free surface of μc-Si is rough at a 100–200-A(ring) scale. This surface roughness strongly increases as a function of the deposited thickness. The various stages of the growth of μc-Si and a-Si:H are systematically compared. The growth of a-Si:H displays a more uniform behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349033
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  • 9
    Electronic Resource
    Electronic Resource
    In situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2132-2135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an in situ study, by spectroellipsometry, of interfaces between amorphous silicon (a-Si:H) and silicon nitride (a-SiNx). The nature of the interface between amorphous silicon and silicon nitride depends on the order of deposition. A behavior compatible with an atomically abrupt interface is observed when a-SiNx is deposited on top of a-Si:H. On the contrary, a graded transition with a width estimated at ≈15 A(ring) is observed when a-SiNx is deposited first. An NH3 plasma treatment has little influence on the interface properties. These different behaviors are attributed to the plasma process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349450
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  • 10
    Electronic Resource
    Electronic Resource
    Reflectance anisotropy investigation of the metalorganic chemical-vapor deposition of III-V heterojunctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1389-1398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using reflectance anisotropy (RA), we investigated in situ the metalorganic chemical-vapor deposition of a number of III-V heterojunctions. Each type of heterojunction exhibits a characteristic RA record as a function of time, depending on the film composition, growth rate, and interface quality, as well as the light wavelength used. Signal changes occurring over different time scales are related to a number of different contributions to the optical anisotropy of the material. Changes during the first 5–10 s are due to the optical anisotropy of both the surface and heterointerface. Over a time scale of several minutes, the signal exhibits damped sinusoidal behavior; a model is proposed to account for these changes, taking into account the interference of light in the growing layer. Finally, the steady-state signal obtained after many minutes is indicative of the difference in surface optical anisotropy between the epilayer and substrate. Practical applications of RA, including heterojunction optimization, superlattice monitoring, and reactor geometry improvements, are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347278
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