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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3388-3393 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase and microstructure of Ni, Co, and Fe impurities found in synthetic diamonds have been characterized in some detail using a combination of extended x-ray absorption fine structure (EXAFS) utilizing intense synchrotron radiation as a light source, and conventional transmission electron microscopy (TEM), x-ray diffraction, and fluorescence analyses. In all three cases, the metal impurity exists as an fcc metallic phase dispersed in the diamond matrix. The particles are submicron in size and not facetted. There was no evidence of a metal carbide phase in these systems. Quantitative simulations of the first-shell EXAFS signal showed that the Co and Ni particles contain, respectively, 2.3 and 1.5 at. % of carbon in solution.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 20-28 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured N 1s near edge absorption spectra and the kinetic energy distribution of electrons emitted in the decay of N 1s core-to-bound-state excitations in condensed pyridine, pyrazine, and s-triazine. The electron emission spectra generated in the electronic decay of the core to bound state resonances lead to singly charged, participator-type molecular final states, equivalent to the final states populated in photoemission, as well as to double hole (Auger) spectator-type final states screened by the presence of a π spectator electron. The deexcitation spectra, therefore, give insight into charge–transfer and screening processes in the initial core-electron excited state, as well as in the final spectator double-hole states. One of the most prominent participator features observed in the spectra of pyridine, pyrazine, and s-triazine is due to the emission of the most strongly bound π electrons, reflecting the dynamic screening of the core hole in the aromatic azabenzene molecules. The spectator states, on the other hand, exhibit a much reduced screening energy shift compared to linear molecules due to the delocalized nature of the π spectator electron.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6859-6864 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unoccupied molecular orbitals of metal-free phthalocyanine (H2PC), nickel-phthalocyanine (NiPC), and copper-phthalocyanine (CuPC) adsorbed on single crystal surfaces have been studied by inverse photoemission spectroscopy (IPES) and near-edge x-ray absorption spectroscopy (NEXAFS). The features observed in the experimental data are assigned by reference to molecular orbital calculations. Carbon and nitrogen 1s NEXAFS measurements of NiPC adsorbed on Cu(110) surface indicates that the phthalocyanine molecular planes are parallel to the surface. X-ray absorption data recorded at the Ni LIII and LII edges show that the unoccupied Ni 3d level is located in the plane of the phthalocyanine rings.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7569-7576 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unoccupied π* bands of epitaxial overlayers of benzene, naphthalene, anthracene, tetracene, perylene, and coronene on a Ag(111) surface have been studied by angle resolved inverse photoemission spectroscopy. A comparison with HAM/3 MO calculations and electron transmission gas phase measurements enables the assignment of the π* affinity levels of these organic systems. In conjunction with previous angle resolved photoemission, optical absorption, and near edge x-ray absorption studies a complete picture of their valence band structure and morphology evolves. Optical and x-ray absorption excitation energies are discussed in the light of the experimentally determined one-electron correlation diagram. Gas phase–solid relaxation energies of the affinity levels are found to decrease in the series of benzene to tetracene (1.7→0.5 eV) attributed to the increasing size of the involved molecular orbitals. For benzene a low lying σ*-shape resonance has been identified in the isochromat inverse photoemission spectrum.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Mirrors made of various materials have been investigated under surface power densities of approximately 1–2 W/mm2 emitted by a powerful hybrid wiggler installed in the 5.3-GeV DORIS storage ring. Thermal inhomogeneities and deformations at surfaces with a height resolution of 50 nm have been determined quantitatively. The only material withstanding these power levels without a significant deformation is SiC. Conventional cooling geometries are found to be useless for a reduction of the surface distortion.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2172-2175 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A dedicated surface analysis beamline with "small spot'' XPS facilities is currently under construction at BESSY. When completed in 1989, it will serve as a primary means for the study of metal, semiconductor, and insulator surfaces via laterally resolved XPS and photoyield measurements. This report discusses the first results of this system as attached to a BESSY plane grating monochromator beamline. The data obtained to date clearly demonstrate the potential these two analytical techniques offer for the study of materials science. A further improvement of lateral resolution (now ≈150 μm) into the 1 μm or even submicron range is discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1200-1213 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow boron-doped junctions in silicon have been investigated by means of secondary ion mass spectrometry, scanning electron microscopy, transmission electron microscopy, spreading resistance profiling, and four-point probe techniques. The junctions were formed by implanting BF+2 ions into n-type Si at the dose range of 1–5×1015 ions/cm2, through a thin (25-nm) screen layer of silicon dioxide. We have emphasized the higher dose range (3–5×1015 ions/cm2) as it is more relevant to processes in the current level of device integration. The use of BF+2 species and the screen oxide layer is necessary in order to form junctions whose depths xj≤0.4 μm, when conventional annealing techniques are employed. We have also examined junctions that were activated in a rapid thermal annealing system that utilizes an incoherent light source. One of the main objectives of this study is to compare conventional and rapid thermal annealing techniques. We thus evaluate the results obtained by these two methods of annealing for both the junction depth xj and the sheet resistivity Rs. Other relevant variables such as a low-temperature (77-K) implantation, surface amorphization by Si implantation, and preactivation annealing have also been examined and their effects are discussed. Based on the results of the present study, a mechanism for boron activation in silicon is discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 20 (1948), S. 434-444 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 13 (1941), S. 51-60 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 33 (1941), S. 516-524 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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