ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hall effect and infrared absorption measurements of n-type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions of three donor species residing at three inequivalent lattice sites (h,k1,k2). A valley-orbit splitting of 12.6 meV is determined for donors on the hexagonal site h. For 2p0, 2p±, 3p0, and 3p± excited states, the effective-mass approximation is found to hold within experimental errors assuming a transverse and longitudinal effective electron mass of m⊥=(0.24±0.01) m0 and m(parallel)=(0.34±0.02) m0, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352318
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