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  • Digitale Medien  (3)
  • 1970-1974  (3)
  • 1930-1934
  • 1971  (3)
Datenquelle
Materialart
  • Digitale Medien  (3)
Erscheinungszeitraum
  • 1970-1974  (3)
  • 1930-1934
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Electrochemical methods for SO2 flue gas treatment (1971)
    Springer
    Journal of applied electrochemistry 1 (1971), S. 41-44 
    Details
    ISSN: 1572-8838
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Elektrotechnik, Elektronik, Nachrichtentechnik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615745
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Dislocation etching of GaSe single crystals (1971)
    Springer
    Journal of materials science 6 (1971), S. 305-308 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02403096
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Dislocation etching of GaSe single crystals (1971)
    Springer
    Journal of materials science 6 (1971), S. 305-308 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00553586
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
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