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  • 1985-1989  (4)
  • 1987  (3)
  • 1985  (1)
Material
Years
  • 1985-1989  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3804-3806 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of cobalt, nickel, and their alloys have been produced on glass substrates by thermal evaporation at oblique angles of incidence α, measured with respect to the substrate normal, ranging from 20° to 78°. Resultant films are characterized by a columnar grain structure inclined toward the source by an angle β, also measured with respect to the substrate normal, such that 2 tan β∼tan α. For α〉60°, the columnar grains assume a rodlike morphology surrounded by voids, whereas for α〈60°, these grains assume a platelike morphology, also inclined toward the source and separated by voids. The void size, defined by spacing between adjacent rods or plates, increases with increasing values of α. Moreover, for α〉60°, the easy axis of magnetization is oriented in the vapor plane, defined by the plane parallel to both the direction of incident flux and substrate normal, whereas, for α〈60°, this axis is oriented perpendicular to the vapor plane. Accordingly, the easy axis of magnetization is oriented parallel to the rodlike morphology when α〉60°, and parallel to the platelike morphology (and in the plane of the film), when α〈60°. Finally, magnetic coercivity increases rapidly at the critical angle of 60°, as transition from platelike to rodlike morphology occurs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1245-1250 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Circular gold dots, measuring about 200 μm in diameter and either 150 or 300 nm in thickness, have been produced on {100}, {110}, and {111} substrates of indium phosphide by a combination of vapor deposition and photolithographic processing, annealed at temperatures ranging from 420–460 °C, and subsequently examined by optical microscopy. During annealing, a reaction product, bounded by well-defined crystallographic planes of the substrate, forms, expands parabolically with annealing time, and eventually saturates due to the limited supply of gold. Generally, reactions proceed at least three times faster at {100} and {110} planes than at {111}In planes, in which reactions proceed about three times faster than at {111}P planes. Analysis of concomitant reaction kinetics yields an activation energy of 8.6±3.0 eV for reactions at {111}In planes. Results are interpreted in terms of a preferential interfacial reaction at {111}In planes, which is controlled by solid-state diffusion and eventual escape of phosphorus.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2155-2160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization produced by ion implantation and subsequent crystallization produced by thermal processing have been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid-phase epitaxy on {111} garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D+2/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014 O+/cm2. The amorphization process evolves in four separate stages: (1) an implanted (crystalline) band, delineated by the implantion strain profile, forms at doses of about 0.50×1016 D+2/cm2/ and 0.95 O+/cm2, (2) isolated amorphous regions of about 10 nm in diameter form at doses of about 1.0×1016 D+2/cm2 and 1.9×1014 O+/cm2, (3) the amorphous regions merge to form a continuous band below the implanted surface at doses of about 3.0×1016 D+2/cm2 and 5.7×1014 O+/cm2, and (4) this band expands to the implanted surface at larger doses. Amorphization is caused by implantation with oxygen, but prior implantation with deuterium sensitizes the lattice by increasing the strain. The crystallization process evolves in three separate stages: (1) small crystallites, about 10 nm in size, form throughout the entire amorphous band after annealing for 10 min at 350 °C, (2) larger crystallites nucleate and grow from the implanted surface and amorphous/crystalline interface after annealing for 10 min at 450 °C, and (3) these crystallites grow in size until they merge to form a continuous polycrystalline layer. Some epitaxial regrowth of the monocrystalline into the amorphous region is also observed. Details of these processes are interpreted in terms of atomic displacement mechanisms and compared with corresponding changes of certain magnetic properties.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Bulletin of environmental contamination and toxicology 38 (1987), S. 899-906 
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
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