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  • 1985-1989  (2)
  • 1989  (2)
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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Schottky diodes on hydrogen plasma treated n-GaAs surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 259-261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160–240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101922
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Distribution ofK α L n satellite yields for mediumZ elements bombarded with16O ions (1989)
    Springer
    The European physical journal 14 (1989), S. 37-43 
    Details
    ISSN: 1434-6079
    Keywords: 34.50 ; 34.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract K α X-ray spectra were measured with a Du Mond type curves crystal spectrometer for42Mo and46Pd targets bombarded with oxygen ions at 5.5 MeV/u energy (i.e. at velocity closely matching those of the targetL-shell electrons). The distribution ofL-shell vacancies produced in collisions with simultaneousK-shell ionization is deduced from the measured yield distribution of theK α X-ray satellites. The distribution shows deviations from the binomial ones. The deviations can be accounted for by assuming that theL-shell vacancy production is due to two uncorrelated processes: the direct ionization by impact and the electron capture from theL-shell of the target atom into theK-shell of the projectile, both occurring at nearly central collisions. The corresponding probability values are deduced using simple statistical considerations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01401341
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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