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  • 1
    ISSN: 1432-1440
    Keywords: Alpha-1-antitrypsin ; Prenatal diagnosis ; Amniocenthesis ; Congenital disorder ; Dysproteinemia ; Genfrequency ; Neonatal hepatitis ; Juvenile cirrhosis ; Emphysema ; Alpha-1-Antitrypsin ; Amniozentese ; Genetische Beratung ; Proteaseinhibitoren
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Bei der Mutter eines an juveniler Leberzirrhose bei Alpha-1-Antitrypsinmangel erkrankten Kindes wurde in ihrer erneuten Schwangerschaft der fetale Phänotyp Pi MZ durch Isoelektrofokussierung des Fruchtwassers festgestellt. Die quantitativen Werte des Alpha-1-Antitrypsins entsprachen denen von Kontrollfruchtwasserproben. Bei der Entbindung bestätigte eine Nabelschnurblutuntersuchung diesen Befund. Somit konnte erstmalig pränatal das Vorliegen eines schweren Alpha-1-Antitrypsinmangels Pi Z ausgeschlossen werden. In diesem Zusammenhang wird auf die klinische Bedeutung des Alpha-1-Antitrypsinmangels, seine Häufigkeit in der europäischen und nordamerikanischen Bevölkerung und die Prognose bei Vorliegen des Phänotyps Pi Z hingewiesen.
    Notes: Summary A mother had a child with cirrhosis of the liver and alpha-1-antitrypsin deficiency. In a subsequent pregnancy the fetal phenotype Pi MZ was detected by isoelectrofocussing in the amniotic fluid. Quantitative assay of alpha-1-antitrypsin gave results in the normal range. Umbilical vein blood analysis confirmed the antenatal findings. In this case it has been possibel to roole out the disease before birth. In this context the clinical importance of alpha-1-antitrypsin deficiency is stressed, its frequency in the European and North-American population and the prognosis with phenotype Pi Z.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    European journal of pediatrics 118 (1974), S. 225-229 
    ISSN: 1432-1076
    Keywords: Antenatal diagnosis ; Enzyme assay ; MSUD ; Recessive inheritance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Es wurde eine pränatale Diagnostik auf Ahornsirupkrankheit bei einer Frau mit zwei an dieser Erkrankung verstorbenen Kindern durchgeführt. Mit einer relativ einfachen Methode konnten wir feststellen, daß die kultivierten Amnionzellen (weiblicher Karyotyp) im Vergleich mit den Kontrollen keine veränderten Enzymaktivitäten zeigten. Die Geburt eines weiblichen, gesunden Säuglings bestätigte unser Ergebnis.
    Notes: Abstract Antenatal diagnosis of MSUD was carried out in a family with 2 known MSUD cases. By means of a relatively simple method we were able to show that the enzyme activity of the cultivated amnion cells (female karyotype) was not lower than the activities of the control cells. The birth of a healthy girl confirmed our result.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    European journal of pediatrics 110 (1971), S. 324-331 
    ISSN: 1432-1076
    Keywords: Arylsulphatase A and B ; Fibroblasts ; Hurler's syndrome ; Hunter's syndrome ; Cystinosis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Die Aktivitäten der Arylsulfatasen A und B wurden in Fibroblastenkulturen von 6 Patienten bestimmt, je 2 Patienten mit Hurler- und Hunter-Syndrom und 2 Patienten mit Cystinose. Die Aktivität der Arylsulfatase A wurde in Fibroblasten von Patienten mit Hurler-Syndrom erniedrigt gefunden. Bei Patienten mit Hunter-Syndrom war diese Aktivität nicht immer erniedrigt. Die Aktivität der Arylsulfatase B in Fibroblasten von Patienten mit Hurler-Syndrom wurde vermehrt gefunden. Bei den Cystinose-Patienten war die Aktivität der Arylsulfatase B in den Fibroblasten erniedrigt.
    Notes: Abstract The activity of arylsulphatases A and B was studied in cultured fibroblasts of 2 patients with Hurler's syndrome, 2 patients with Hunter's syndrome and 2 patients with cystinosis. The activity of arylsulphatase A was found to be lower in fibroblasts in patients with Hurler's syndrome than in the controls while it was not always decreased in Hunter's syndrome. The activity of arylsulphatase B was increased in fibroblasts in Hunter's syndrome. In cystinosis the activity of arylsulphatase B was selectively decreased in fibroblasts.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-1076
    Keywords: Key words     Kabuki syndrome ; Niikawa-Kuroki syndrome ; Long palpebral fissures ; Fetal fingertip pads ; Kabuki make-up syndrome
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract      The Kabuki (Niikawa-Kuroki) syndrome was reported in 1981 by Niikawa et al. [19] and Kuroki et al. [15] in a total of ten unrelated Japanese children with a characteristic array of multiple congenital anomalies and mental retardation. The syndrome is characterized by a distinct face, mild to moderate mental retardation, postnatal growth retardation, dermatoglyphic and skeletal abnormalities. In Japan, the syndrome appears to have an incidence of about 1:32 000 newborns. Outside of Japan, a growing number of patients have been recognized. Clinical data are presented on 29 Caucasian patients; the patients were diagnosed over a relatively short period of time, indicating that the incidence outside of Japan is probably not lower than in Japan. A literature review of 89 patients (60 Japanese and 29 non-Japanese) is given. In 66% of the non-Japanese patients serious neurological problems were present, most notably hypotonia and feeding problems (which were not only related to the cleft palate); this was not reported in the Japanese patients. Inheritance is not clear. Most patients are isolated, sex-ratio is equal. The syndrome can be recognized in patients with cleft (lip/)palate, with mild to moderate developmental delay and in young children with hypotonia and/or feeding problems. In counselling parents, the designation "Kabuki" syndrome seems to be more appropriate than "Kabuki make-up" syndrome.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-1076
    Keywords: Kabuki syndrome Niikawa-Kuroki syndrome ; Long palpebral fissures ; Fetal fingertip pads ; Kabuki make-up syndrome
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The Kabuki (Niikawa-Kuroki) syndrome was reported in 1981 by Niikawa et al. [19] and Kuroki et al. [15] in a total of ten unrelated Japanese children with a characteristic array of multiple congenital anomalies and mental retardation. The syndrome is characterized by a distinct face, mild to moderate mental retardation, postnatal growth retardation, dermatoglyphic and skeletal abnormalities. In Japan, the syndrome appears to have an incidence of about 1∶32 000 newborns. Outside of Japan, a growing number of patients have been recognized. Clinical data are presented on 29 Caucasian patients; the patients were diagnosed over a relatively short period of time, indicating that the incidence outside of Japan is probably not lower than in Japan. A literature review of 89 patients (60 Japanese and 29 non-Japanese) is given. In 66% of the non-Japanese patients serious neurological problems were present, most notably hypotonia and feeding problems (which were not only related to the cleft palate); this was not reported in the Japanese patients. Inheritance is not clear. Most patients are isolated, sex-ratio is equal. The syndrome can be recognized in patients with cleft (lip/)palate, with mild to moderate developmental delay and in young children with hypotonia and/or feeding problems. In counselling parents, the designation “Kabuki” syndrome seems to be more appropriate than “Kabuki make-up” syndrome.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 259-261 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160–240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1152-1154 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependence of catastrophic optical damage (COD) was studied for the cw operation of AlGaAs single quantum well lasers with cleaved mirrors. An empirical rule is proposed, which yields the time for a COD failure in the form of a rate equation, containing a frequency factor and an activation energy. In this way COD is explained as a thermally activated process, depending on the mirror temperature.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2356-2364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the GaAs surface condition on the properties and thermal stability of WNx Schottky diodes on GaAs has been studied by performing in situ H2 and N2 plasma treatments just before the WNx sputter deposition. The WNx/GaAs contacts have been investigated by x-ray photoelectron spectroscopy, Rutherford backscattering, nuclear reaction analysis, secondary ion-mass spectroscopy, x-ray diffraction, and transmission electron microscope and correlated to electrical current-voltage and capacitance-voltage measurements. A strong correlation was found between the diode properties and the surface conditions, both for the as-deposited samples and for samples annealed in the range 700–850 °C. Poor rectifying properties were obtained for the plasma-cleaned diodes due to the cumulative effects of plasma cleaning and sputter deposition. After annealing, improved characteristics were generally found. The highest Schottky barrier height values φI-V=0.76 V, which were found for the H2 plasma treated diodes annealed at 800 °C, were almost independent of the WNx composition and sputtering conditions. The H2 treated samples also showed the smoothest WNx/GaAs interface. HCl cleaned and N2 treated surface also showed high-barrier height and small interfacial reactions after high-temperature annealing.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4848-4853 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependence of catastrophic optical mirror damage (COMD) is investigated for cw operation of AlGaAs-GaAs quantum well lasers. The apparent Arrhenius parameters (i.e., the activation energy and pre-exponential factor) for the rate process leading to COMD are determined. In particular, we compare the rate process for various cleaved facets with and without a subsequent plasma oxidation step. Analysis of the experimental Arrhenius parameters indicates that surface reactions on the corroded facets are responsible for facet degradation accompanied by heating. A tentative model of the facet heating that ultimately leads to COMD is presented.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4812-4820 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barrier heights of refractory W, WSix, and WAlx Schottky contacts deposited on n-GaAs with different surface treatments have been electrically characterized by current-voltage, capacitance-voltage, and internal photoemission measurements. Internal photoemission measurements indicate that the Fermi level pins approximately at midgap (Φn (approximately-equal-to)0.7–0.8 eV). The current-voltage barrier heights were consistent with internal photoemission for diodes with little oxide at the GaAs/metal interface. For an oxide layer of about 2.5 nm, current-voltage barrier heights as high as 0.9 eV were observed. Capacitance-voltage barrier heights were found to be 0.9–1 eV with a weak dependence on interface oxide. A theoretical model was developed to explain these results. A large density of states (5×1013–1014/cm2) at the GaAs/metal interface which exchanges charge mainly with the metal appears to explain well our experimental capacitance-voltage and current-voltage data.
    Type of Medium: Electronic Resource
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