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Influence of In on Si local vibrational modes in InxGa1−xAs (0≤x≤0.12) (1994)

Alvarez, A. L. ; Calle, F. ; Wagner, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 7797-7804

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Local vibrational modes (LVM) of Si in substitutional sites have been observed by resonant Raman spectroscopy in highly doped (≥8×1018 cm−3) InxGa1−xAs layers, either relaxed or under strain, on [100] GaAs substrates. The peak frequency ωLVM of the Si on Ga site (SiGa) LVM in unstrained samples shifts to lower values with increasing In content. For x≤0.10 this shift is clearly higher than expected from a linear interpolation between the measured values in the binaries. The comparison between the SiGa peak frequency measured in both a full strained layer and a relaxed layer with similar composition provides a rough determination of the deformation potentials for the SiGaLVM in these layers: q/ω2LVM=−2.7±1 and p/ω2LVM=−2.5±1. As the In content becomes higher the width of the SiGa peak increases much more than that of the GaAs-like longitudinal optical-phonon peak, revealing the splitting due to the loss of local symmetry introduced by the In. New calibration factors for the Si-defect concentrations have been deduced, which allow estimation of the solubility limit for the Si incorporation in substitutional positions, which ranges from 2.3×1019 to 2.6×1019 cm−3 for the layers at the growth conditions used. The analysis of the integrated intensity of the LVM Raman peaks indicates that the degree of electrical compensation is clearly reduced for increasing In up to x≤0.05, due to both an increase of the solubility limit for Si in these layers and a saturation or slight reduction of the SiAs-related defect concentrations. This conclusion is also supported by Hall and plasmon measurements. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358521

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Zeitstandverhalten einiger fortschrittlicher Schaufelwerkstoffe für IndustriegasturbinenAuszug aus einer beim Fachbereich Maschinenbau der Technischen Hochschule Darmstadt einzureichenden Dr.-Ing. Diss. von M. Maier (1994)

Kloos, K. H. ; Granacher, J. ; Maier, M.

Weinheim : Wiley-Blackwell

Materialwissenschaft und Werkstofftechnik 25 (1994), S. 273-283

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ISSN: 0933-5137

Keywords: Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Description / Table of Contents: Creep rupture behaviour of some advanced materials for industrial gas turbinesThe creep rupture behaviour of three DS-alloys, an ODS-alloy and a PM-alloy for gas turbine blades is investigated up to 20 000 h test duration. Further, the elastoplastic behaviour is determined in tensile tests and the contraction behaviour in long-term annealing tests. On this basis, a characterisation of the strength and partly a modelling of the deformation behaviour of the alloys is given.

Notes: Das Zeitstandverhalten von drei Ds-Werkstoffen, einem ODS-Werkstoff und einer PM-Legierung für Gasturbinenschaufeln wird in Versuchen bis zu 20 000 h Dauer ermittelt. Ferner wird das elasto-plastische Kurzzeitverhalten in Warmzugversuchen und das Kontraktionsverhalten in langzeitigen Glühversuchen bestimmt. Auf dieser Grundlage erfolgt eine Beschreibung des Festigkeits-und teilweise auch des Verformungsverhaltens der untersuchten Werkstoffe im Hochtemperaturbereich.

Additional Material: 3 Ill.