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  • 1
    Electronic Resource
    Electronic Resource
    A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1−xAs relaxed layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4690-4695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of high concentrations ((approximately-greater-than)1019 cm−3) of Si, Be, and C in InxGa1−xAs relaxed layers has been studied as a function of In content (x≤0.16) by Raman spectroscopy of local vibrational modes (LVM). The frequencies of the Raman peaks resulting from the convolution of several split modes shift to lower values as the In content is increased, the carbon acceptor (CAs) local mode frequency showing the strongest dependency on x. Features attributed exclusively to the influence of In on second-neighbor sites are identified only in the Si-doped samples. The transverse and longitudinal modes expected from the splitting of a LVM of CAs with one In first neighbor are not observed in layers with x up to 0.085. A new calibration for the BeGa, CAs, and Si-related LVM leads to the conclusion that In increases the total electrical activation of Si and favors its incorporation on group-III sublattice sites. In contrast, no influence of In on the Be or C doping activation has been detected. The analysis of the CAs LVM spectra supports the view that in InxGa1−xAs CAs is preferably surrounded by Ga instead of In atoms for x≤0.085. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359816
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of In on Si local vibrational modes in InxGa1−xAs (0≤x≤0.12) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7797-7804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local vibrational modes (LVM) of Si in substitutional sites have been observed by resonant Raman spectroscopy in highly doped (≥8×1018 cm−3) InxGa1−xAs layers, either relaxed or under strain, on [100] GaAs substrates. The peak frequency ωLVM of the Si on Ga site (SiGa) LVM in unstrained samples shifts to lower values with increasing In content. For x≤0.10 this shift is clearly higher than expected from a linear interpolation between the measured values in the binaries. The comparison between the SiGa peak frequency measured in both a full strained layer and a relaxed layer with similar composition provides a rough determination of the deformation potentials for the SiGaLVM in these layers: q/ω2LVM=−2.7±1 and p/ω2LVM=−2.5±1. As the In content becomes higher the width of the SiGa peak increases much more than that of the GaAs-like longitudinal optical-phonon peak, revealing the splitting due to the loss of local symmetry introduced by the In. New calibration factors for the Si-defect concentrations have been deduced, which allow estimation of the solubility limit for the Si incorporation in substitutional positions, which ranges from 2.3×1019 to 2.6×1019 cm−3 for the layers at the growth conditions used. The analysis of the integrated intensity of the LVM Raman peaks indicates that the degree of electrical compensation is clearly reduced for increasing In up to x≤0.05, due to both an increase of the solubility limit for Si in these layers and a saturation or slight reduction of the SiAs-related defect concentrations. This conclusion is also supported by Hall and plasmon measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358521
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  • 3
    Electronic Resource
    Electronic Resource
    Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric-field-induced Raman scattering by longitudinal optical (LO) phonons has been used to study the surface Fermi level position in InSb layers grown by molecular beam epitaxy on (100) GaAs. From the analysis of a variety of layers it is found that the LO phonon scattering intensity, relative to that of intrinsic two-LO phonon scattering, decreases with increasing optical power density in n-type samples, but remains constant in p-type and undoped layers, which are residual p type. The power dependence of the relative LO phonon intensity for n-type doping is shown to be caused by a surface electric field, the strength of which is reduced upon increasing illumination due to screening by photogenerated carriers. As this effect is only found in n-type layers, we conclude that the surface Fermi level is pinned at the valence band thus giving rise to a sizeable surface electric field in n-type but not in p-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110039
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  • 4
    Electronic Resource
    Electronic Resource
    Relaxation of InGaAs layers grown on (111)B GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3212-3214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation behavior of InGaAs layers grown by molecular beam epitaxy on (111)B GaAs is investigated and compared with simultaneously grown (100) reference samples. Surface morphology, defect microstructure, and optical quality of the layers during the relaxation process are studied by Nomarski interference contrast, transmission electron microscopy, low-temperature photoluminescence, and Raman spectroscopy. These techniques reveal an inhomogeneous and anisotropic relaxation in (111) samples. In (111) samples, the increase of critical thickness and the slower relaxation dependence on thickness, as compared with the (100) reference samples, is discussed © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112415
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