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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2880-2882 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of BC2N thin films have been investigated in terms of the temperature dependence of the resistivity and Hall effect measurements. The BC2N thin films were prepared by chemical vapor deposition from acetonitrile and boron trichloride on polycrystalline Ni and quartz substrates. The experimental results indicated that the BC2N films were p-type semiconductors on both substrates, with acceptor levels between 7.5 and 23 meV relative to the valence band. The hole mobility on Ni substrates was one order of magnitude higher than that on the quartz substrates, suggesting that the thin film quality is better on Ni substrates than on quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 192-200 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride is grown by metalorganic vapor phase epitaxy with and without a low-temperature-grown AlN buffer layer. Variations in the surface morphology and the layer properties are compared between two-step growth and direct growth to study the effects of various growth conditions. It is found that (i) conditions that stabilize the GaN(0001) surface serve as guidelines for obtaining mirrored surfaces, and (ii) raising GaN growth temperature improves crystallographic, electrical, and luminescence properties of GaN. The observed improvement in the layer properties with increase in GaN growth temperature suggests that increasing N2 dissociation pressure does not affect GaN properties. GaN growth conditions are analyzed thermodynamically to show that NH3 in the growth ambients has the potential to suppress thermal dissociation of GaN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3812-3814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fourth-harmonic generation of 1.5 ps, 1.053 μm glass laser pulses, where group velocity mismatch plays a significant role, at intensities up to 100 GW/cm2 using newly developed crystal, cesium lithium borate (CsLiB6O10). Type-I doubler and type-I quadrupler were used in the fourth harmonic generation experimental scheme. Energy conversion efficiencies of 24% and 53% have been achieved for frequency quadrupling and doubling of the fundamental glass laser pulses, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2962-2964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the bonding states of BC2N thin films prepared by chemical vapor deposition, one of the new layered BCN compounds. The chemical bonding states of boron, carbon, and nitrogen atoms in the BC2N thin films were investigated by using x-ray photoelectron spectroscopy to measure chemical shifts of 1s electrons, being compared with those in graphite and hexagonal (h-) BN. The results exhibited that the thin films had significant B–C and C–N bonds and were clearly different from graphite and h-BN, indicating that an atomic-level hybrid of the three elements was synthesized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2822-2824 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2463-2465 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient tunable ultraviolet generation by intracavity frequency doubling of a continuous wave Ti:sapphire laser was demonstrated. Maximum output is obtained of 460 mW at 398 nm corresponding to a total infrared-to-ultraviolet conversion efficiency over 70%. High conversion efficiency was resulted from a critically phase-matched, temperature-tuned lithium triborate crystal and a novel resonator design. The observed laser damage of the crystal coatings is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1602-1604 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulse operation of electron cyclotron resonance plasma was performed for the fabrication of diamond films by chemical vapor deposition. With square wave amplitude modulation of microwaves at 500 Hz in frequency, the growth rate became twice as large as one of continuous operation with the same microwave power. Time resolved measurement of the optical emission from the pulse modulated plasma was also carried out. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 8858-8864 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The site-specific fragmentation by core-to-valence resonant photoexcitation has been investigated for condensed (CH3S)2 (dimethyl disulfide). The data presented are the desorption yields of the fragment ions from multilayered (CH3S)2 around the sulfur K-edge photoexcitation as well as the x-ray absorption and Auger decay spectra. The x-ray absorption spectrum exhibits the double structure of the S 1s→σ* resonance peak corresponding to the S 1s→σ*(S–S) and S 1s→σ*(S–C) photoexcitations. It was found that the S 1s→σ*(S–C) excitation is predominantly followed by the CH+3 desorption, but the CH+3 and S+ ions are desorbed in comparable intensity at the S 1s→σ*(S–S) excitation. The Auger decay spectra around the S 1s→σ* excitation revealed that there exist two kinds of sulfur KL2,3L2,3 spectator Auger decay originating from the S 1s→σ*(S–S) and S 1s→σ*(S–C) resonant excitations. The observed site-specific fragmentation is interpreted in terms of the localization of the spectator electron in each antibonding orbital, i.e., σ*(S–S) and σ*(S–C). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 2222-2224 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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