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  • 1995-1999  (40)
  • 1999  (27)
  • 1996  (13)
  • 1
    Digitale Medien
    Digitale Medien
    Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2995-3002 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The open-tube diffusion of zinc in GaAs0.8P0.2 from a zinc-doped silica film was investigated in detail. Aluminum nitride (AlN) and silicon nitride (SiNx) films were used as the anneal caps. The dependence of diffusion depth on the thickness of an AlN-cap was found to differ from its dependence on SiNx-cap thickness. The selective masked diffusion of zinc using an AlN diffusion-mask was also systematically studied. The diffusion depth in selective masked diffusion was found to depend on both AlN-cap thickness and AlN-diffusion-mask thickness. The experimental results suggest that diffusion depth is not necessarily governed by either cap thickness or diffusion-mask thickness. From this standpoint, the role of film stress on diffusion depth was then quantitatively investigated. It was found that diffusion depth can be scaled well with total film stress in the measured film-thickness range. In this sense, it can be concluded that total film stress is the primary factor that determines the diffusion depth under the measured diffusion conditions. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362652
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  • 2
    Digitale Medien
    Digitale Medien
    Important factors included in nondestructive readout of GMR MRAM (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6642-6642 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We proposed a new type of magnetoresistive random access memory (MRAM) using a weakly coupled GMR effect. It operates on the general principle of storing a binary digit in hard component and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered. It is believed that this structure could have nondestructive readout (NDRO) characteristics. However, in experiments we found that NDRO was not always achieved; i.e., NDRO was dependent on the polarity of the excitation field. We take an example for mode "0'' (corresponding to a + remanent state). Although tests involving 3×108 plus excitation pulses indicated that the element was still stable, stability against minus disturb pulses could not be expected. The remanent state of 0 was degrading gradually and was finally destroyed after nenormous numbers of readout switching. An analytical model, in which the hard component follows the Rayleigh law, can explain the above phenomenon. It is because the irreversible magnetization processes cause disturbed states (0′ or 1′). Obviously the worst case for mode 0 is being excited by continous minus pulses whereas the worst case for mode 1 is being excited by continous plus pulses. We think that two methods will be effective to eliminate the unstability. One is to obtain a rectangular hysteresis loop for the hard component. The other is to imporve the excitation method, for example, to employ bipolar pulses for excitation signals. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362444
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  • 3
    Digitale Medien
    Digitale Medien
    A dusty double plasma device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2345-2348 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A novel dusty plasma device to create spatially and temporally uniform steady state dusty plasma is described. An ultrasonic vibrator is used to vibrate a dust dispenser which disperses the dust uniformly through a fine mesh. A dusty plasma of large dimension with controllable dust density is produced. Measured dusty plasma parameters are compared with existing theories. Some experimental results related to propagation characteristics of dust-ion-acoustic waves in a dusty plasma column are presented. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1149761
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  • 4
    Digitale Medien
    Digitale Medien
    Initial long-pulse plasma heating at reduced power with negative-ion-based neutral beam injector in large helical device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4260-4265 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have achieved long-pulse plasma heating using a negative-ion-based neutral beam injector (NBI) in the large helical device (LHD), where the confinement magnetic field is generated by only external superconducting coils. In the initial long-pulse experiments at lower power than that in short-pulse experiments, 80 keV–1.1 MW NBI heating lasted for 10 s with a little increase in the plasma density at the pulse end. Almost steady-state plasma heating was achieved for 21 s with 66 keV–0.6 MW NB injection. Plasma relaxation oscillation phenomena at a period of 1–2 s were also observed for 20 s. Above 1 keV plasma was easily sustained with a long-pulse NBI heating in LHD, without the current drive nor the disruption in tokamaks. Negative ion source operation was stable and the cooling water temperature rise of beam accelerator grids was nearly saturated with a temperature rise below 10 °C. For a higher power injection, the pulse duration is determined by the beam blocking, where the reionization loss is exponentially increased together with an increase in outgas in the injection port. The port conditioning by a careful repetition of injection is effective to the extension of the injection duration and the plasma maintenance duration. The initial long-pulse NBI heating at the reduced power has demonstrated an ability of steady-state operation in superconducting LHD. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150063
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  • 5
    Digitale Medien
    Digitale Medien
    Oblique collision of modified Korteweg–de Vries ion-acoustic solitons (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 3466-3470 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two-dimensional propagation and oblique collision of modified Korteweg–de Vries (mKdV) ion-acoustic solitons in a plasma with negative ions have been investigated experimentally. At a critical concentration of negative ions, both compressive and rarefractive mKdV solitons exhibit a resonance interaction at a particular amplitude when the colliding angle is fixed. The amplitude is found to be equal for both compressive and rarefractive solitons. The collided solitons suffer a positive phase shift during the interaction. The new solitons formed during the resonant interaction are found to obey the energy and momentum conservation laws of the mKdV solitons for three-wave interaction. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.873607
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  • 6
    Digitale Medien
    Digitale Medien
    Large conductance anisotropy in a novel two-dimensional electron system grown on vicinal (111)B GaAs with multiatomic steps (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4093-4095 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel selectively doped AlGaAs/GaAs heterojunction was successfully formed on a vicinal (111)B substrate, in which both quasiperiodic and aperiodic multiatomic steps with the average spacings of ∼20 nm are introduced. It is found that the electrical conductance G⊥ of two-dimensional electrons across the steps is far lower than that of G(parallel) along the steps and the ratio G(parallel)/G⊥ exceeds 100 at 18 K. While G(parallel) is almost independent of temperature T below ∼70 K, G⊥ increases exponentially with 1/T with the activation energy of ∼5 meV, indicating the presence of potential barriers for the electron motion across the aperiodic steps. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117829
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  • 7
    Digitale Medien
    Digitale Medien
    Single-electron memory using carrier traps in a silicon nitride layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.124159
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  • 8
    Digitale Medien
    Digitale Medien
    Metallic resistively coupled single-electron transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 132-134 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated and measured transport properties of resistively coupled single-electron transistors (R-SETs). In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122973
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  • 9
    Digitale Medien
    Digitale Medien
    Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 275-277 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115661
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  • 10
    Digitale Medien
    Digitale Medien
    Purification and characterization of nitrate reductase from nodule cytosol of soybean plants (1999)
    Copenhagen : Munksgaard International Publishers
    Physiologia plantarum 105 (1999), S. 0 
    Details
    ISSN: 1399-3054
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Biologie
    Notizen: Nodulated soybean (Glycine max [L.] Merr.) plants were grown in a nitrogen-free liquid culture medium prepared with distilled water. The cytosol fraction from root nodules showed a significant level of NADH-dependent nitrate reductase activity, even when the root did not show activity. This nitrate reductase was purified by column chromatography and native polyacrylamide gel electrophoresis (PAGE). The purified protein showed a main band at 100 kDa on sodium dodecyl sulfate (SDS)-PAGE. The Km value for nitrate was 0.16 mM, and the highest activity was obtained at around pH 7.5. These characteristics are very similar to the inducible type of nitrate reductase, previously purified from soybean leaves. The developmental change in activity of this enzyme corresponded to that in nitrogenase activity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1034/j.1399-3054.1999.105302.x
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