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  • 1995-1999  (8)
  • 1997  (8)
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  • 1995-1999  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7320-7325 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conductivities (σdc) of the as-quenched Bi3.5Pb0.5Sr3Ca3Cu4Ox+zAg2O (with z=1, 3, 5, and 10 wt %) glassy precursors for high Tc superconductors are found to be much higher (∼10−5−101 Ω−1cm−1) than those of the corresponding Ag2O free Bi3.5Pb0.5Sr3Ca3Cu4Ox (denoted by BPB) precursor glass (∼10−13−10−6 Ω−1cm−1). This unusually high conductivity is attributed to the increase of carrier concentrations caused by the addition of Ag2O (also observed from the Hall effect measurements). The experimentally observed high values of σdc do not follow Mott's variable range hopping model which is in sharp contrast to the behavior of the corresponding pure BPB and many other conventional transition metal oxide glasses having high resistivities. Moreover, the Seebeck coefficients (S) of these glassy precursors show nonlinear variations (from negative at lower temperature to positive at higher temperature) which cannot be clearly explained by phonon drag or electron-phonon interaction. This behavior of S which is also supported from Hall effect measurement is considered to be due to the nonlinear thermal variations of carrier concentrations (both hole and electron) present in the glassy samples. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 3786-3807 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle-laden turbulent flows, at average volume fraction less than 4×10−4, in open channels are numerically simulated by using a pseudospectral method. The motion of particles, that are large compared with the dissipative length scale, is coupled to the fluid motion by a method that generates a "virtual" no-slip boundary on the particle surface by imposition of an external force field on the grid-points enclosed by the particle. Cases for both moving and stationary particles, lying on the wall, are simulated. The investigations focus on particle-turbulence interaction. It is found that particles increase turbulence intensities and Reynolds stress. By examining higher order turbulence statistics and doing a quadrant analysis of the Reynolds stress, it is found that the ejection-sweep cycle is affected—primarily through suppression of sweeps by the smaller particles and enhancement of sweep activity by the larger particles. An assessment of the impact of these findings on scalar transfer is made, as enhancement of wall heat/mass transfer rates is a motivation of the overall work on this subject. In the cases considered, comparison of the calculations with an existing experiment was possible, and shows good agreement. At present, due to limitations in available computational resources, this method cannot be used when the particle diameter is smaller than the smallest turbulence scale (e.g. the Kolmogorov length scale) and the volume fraction is of the same order as studied in this paper, i.e. between 10−3 and 10−4. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 2429-2442 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Navier–Stokes equations have been solved, by a pseudospectral method, for pressure-driven flows between a no-slip wavy wall and a slip flat wall. Periodic boundary conditions were used in the streamwise and spanwise directions. The physical domain is mapped into a computational domain that is a rectangular parallelepiped using a nonorthogonal transformation. The pseudospectral solution procedure employed in previous studies, for example, Lam and Banerjee [Phys. Fluids A 4, 306 (1992)], eliminated the pressure and solved for the wall–normal velocity and vorticity. The other velocity components were calculated using the definition of vorticity, and the continuity equation. This procedure leads to oscillations in the pressure field when solutions were attempted in the mapped computational domain. To overcome the problem, the procedure had to be modified and the pressure solved for directly using a fractional time step technique. For the cases examined here, these modifications resulted in spectral accuracy being maintained. Flow over sinusoidal wave trains has been simulated and the results compare well with available experiments. The simulations show significant effects of the wavy boundary on the mean flow and the turbulence statistics. The mean velocity profile differs substantially from the profile for the flat-wall case, particularly in the buffer region where the fluid is under the influence of both the wavy wall and the slip boundary. The velocity fluctuations in the streamwise direction decrease in the buffer region. This effect becomes more pronounced when the wave amplitude increases. Most of the redistribution of energy, from the streamwise direction to the spanwise and wall–normal directions, occurs in a thin layer close to the boundary, downstream of the wave troughs. The energy primarily redistributes into spanwise fluctuations. High shear stress regions form downstream of the wave troughs, and streaky structures and quasi-streamwise vortices are also seen to initiate in these regions. The length of the streaks, and the extent of the quasi-streamwise vortices, scale with wave length for the two cases investigated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2184-2186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of atomic hydrogen with boron-doped Si(100) were studied using temperature programmed desorption (TPD). In addition to adsorbing at surface sites, hydrogen penetrates into boron-doped Si(100) samples and gets trapped by forming subsurface boron–hydrogen complexes. H2-TPD spectra, taken after exposure to atomic hydrogen, showed, in addition to the well known dihydride (680 K) and monohydride (795 K) desorption features, two peaks at 600 and 630 K due to decomposition of subsurface boron–hydrogen complexes. Increasing total hydrogen uptake with increasing dosing temperature (1.7 ML at 300 K, 4.2 ML at 500 K), suggests an activation barrier for subsurface hydrogen uptake. A quantitative correlation between boron concentration and subsurface hydrogen uptake is shown. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article discusses the electrical characterization of low-temperature intrinsic Si films deposited by remote plasma-enhanced chemical vapor deposition. Metal-oxide-semiconductor (MOS) capacitors were fabricated on films deposited over a range of temperatures. Conventional MOS measurements such as capacitance versus voltage, breakdown voltage, Zerbst plot, and charge-to-breakdown were used to analyze the capacitors. The results of these measurements not only yielded information about the electrical properties of the films, but also led to conclusions regarding structural quality and the presence of metal contamination. This, coupled with the fact that capacitor fabrication requires only a simple, moderate-thermal budget process, makes MOS capacitor measurements an attractive technique for the characterization of low temperature epitaxial Si films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 4 (1997), S. 185-190 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The results of an X-ray reflectivity study of thick AlAs–AlGaAs and thin Ge–Si–Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1435-1536
    Keywords: Key words Encapsulation ; polyphenol ; w / o microemulsion ; magnetic microspheres
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  A simple method to encapsulate intramicellar solutes (enzymes, nanoparticles) in polymer microspheres is described. The method involves dissolving a polymer in a minimum amount of solvent. The polymer solution is then added to a large volume of a nonsolvent system containing bis(2-ethylhexyl)sulfo-succinate (AOT) reversed micelles. Immediate precipitation of the dissolved polymer takes place. The precipitation results in the formation of stable microparticles ∼0.1–1 μm in diameter. There is a direct correlation between the internal voidage of the particles and the water content of the micelles. Precipitation also leads to encapsulation of intramicellar solutes, resulting in the formation of microspherical composites.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Abstracts are not published in this journal
    Type of Medium: Electronic Resource
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