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  • Artikel: DFG Deutsche Nationallizenzen  (2)
  • 1995-1999  (2)
  • 1998  (2)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (2)
Materialart
Erscheinungszeitraum
  • 1995-1999  (2)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3700-3705 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical properties of tin oxide varistors doped with CoO, Nb2O5, and Cr2O3, were investigated using the impedance spectroscopy technique with the temperature ranging from 25 to 400 °C. The impedance data, represented by means of Nyquist diagrams, show two time constants with different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O2 species at the grain boundary interface. The Arrhenius plots show two slopes with a turnover at 200 °C for both the higher and lower frequency time constants. This behavior can be related with the decrease of minor charge carrier density. The barrier formation mechanism was associated with the presence of CrSn⋅ at the surface, which promotes the adsorption of the O′ and O″ species which are in turn proposed as being responsible for the barrier formation. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 9 (1998), S. 159-165 
    ISSN: 1573-482X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Maschinenbau
    Notizen: Abstract The non-linear electrical properties of CoO-doped and Nb2O5-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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