ISSN:
1432-0630
Keywords:
PACS: 68.55; 77.84.B; 79.20.D; 81.15.F
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. nitrides by laser-induced molecular beam epitaxy (LIMBE). The requirements for the formation of high-quality, monocrystalline layers are much stronger than those for polycrystalline films. We have modified and improved the conventional pulsed laser deposition. In our process, we use metallic targets in a nitrogen environment instead of ceramic or pressed powder nitrides and we employ picosecond laser pulses with high energy (〉1 mJ) and high repetition rate (2 kHz). We have grown GaN, AlN, InN, InGaN and Mg-doped GaN on sapphire (0001).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051533
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