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  • 1
    Electronic Resource
    Electronic Resource
    Co-regulation of mucosal nitric oxide and prostaglandin in gastric adaptive cytoprotection (1999)
    Springer
    Inflammation research 48 (1999), S. 471-478 
    Details
    ISSN: 1420-908X
    Keywords: Key words: Nitric oxide — Prostaglandins — Adaptive cytoprotection — Ethanol — Gastric defense — Mucosa
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Objective: The correlation between mucosal generation of nitric oxide (NO) and prostaglandin E2 (PGE2) in gastric adaptive cytoprotection was investigated.¶Materials and Treatment: Male Sprague-Dawley rats were pretreated with either Nw-nitro-L-arginine methyl ester (L-NAME, 12.5mg/kg i.v.) or indomethacin (5mg/kg s.c.). Following that, mild irritant 20% ethanol was administered, 15min prior to 100% ethanol challenge.¶Methods: Macroscopic gastric mucosal damage, NO synthase activity, mucosal PGE2 and leukotriene C4 (LTC4) levels were measured.¶Results: Administration of L-NAME and indomethacin significantly reduced the protective action of 20% ethanol against 100% ethanol-induced gastric mucosal damage. Besides, mucosal activity of constitutive NO (cNO) synthase, but not of the inducible isozyme (iNO synthase), was elevated following 20% ethanol treatment. This was accompanied by a reduction in mucosal leukotriene C4 level. Indomethacin significantly inhibited mucosal PGE2 biosynthesis but increased cNO synthase activity. Nevertheless, L-NAME reduced both cNO and iNO formation and prevented the increase in cNO formation caused by 20% ethanol, while enhancing mucosal PGE2 production. Combined L-NAME and indomethacin treatment markedly potentiated ethanol-induced mucosal damage, and completely prevented the increase in cNO or PGE2 biosynthesis when either compound was given alone.¶Conclusions: These findings suggest a co-regulatory relationship between mucosal NO and PG in the gastric defense system, which will be released after activation by the mild irritants to induce cytoprotection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s000110050489
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular-level description of temperature and pressure effects on the viscosity of water (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10171-10176 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The steep non-Arrhenius temperature dependence at low temperatures of the shear viscosity of water and its backwards-sounding increased fluidity under pressure for temperatures below 33 °C are two of the anomalies of this liquid that have been known for a very long time. The purpose of the present paper is to show how these two important characteristics of water emerge quantitatively from an explicit two-state outer-neighbor mixture model that we have used to explain many other properties of this substance. It will be shown here that both of these viscosity anomalies are directly related to the steep variations with temperature and pressure of the fractional compositions of ice-Ih-type bonding and ice-II-type bonding in the two-state mixture. This compositional dependence has already been obtained in earlier work from the variations of the density and the isothermal compressibility of water with temperature. The viscosity analysis presented here thus helps to unify further all the properties of this liquid under a single, very simple structural characteristic. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480367
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  • 3
    Electronic Resource
    Electronic Resource
    The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature in situ photoexcitation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124335
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of deep-level centers in p-type silicon following ion implantation at 85 K (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123519
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  • 5
    Electronic Resource
    Electronic Resource
    Relationship Between Frictional Heating and Microfailure State in a Continuous Fiber-Reinforced Ceramic Matrix Composite Under Cyclic Loading (1999)
    Springer
    Journal of materials science 18 (1999), S. 463-466 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006690313998
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