Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Modification of metal/GaN contacts with GaAs interlayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6539-6541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated feasibility of GaAs interlayers for the metal/GaN interface with synchrotron-radiation photoelectron spectroscopy. We have found that the use of piranha/HCl solutions is effective as a surface cleaning technique for GaN. We have confirmed that (111) GaAs grows epitaxially on a (0001) GaN substrate. Pd/GaAs/GaN sandwich structures have been successfully fabricated with molecular beam epitaxy. We have confirmed the GaAs interlayer modifies the band diagram at the metal/GaN interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370158
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of carrier-trapping phenomena in ultrathin chemical oxides using x-ray photoelectron spectroscopy time-dependent measurements (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2011-2013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a technique to characterize carrier-trapping phenomena in SiO2 by measuring the Si 2p core-level energy of Si substrates covered with thin SiO2 layers as a function of x-ray irradiation time. It is found that the Si 2p peak energy, which corresponds to the band bending at the SiO2/Si interface, changes as the x-ray irradiation time increases. We attribute this to carrier-trapping phenomena in SiO2. By using this technique, it is found that the carrier-trapping phenomena differ remarkably among several chemical oxides. We also discuss the atomic structure of the traps that cause the trapping phenomena. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123730
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The effect of calcium on flavanol production in cell suspension cultures of Polygonum hydropiper (1999)
    Springer
    Plant cell reports 18 (1999), S. 759-763 
    Details
    ISSN: 1432-203X
    Keywords: Key wordsPolygonum hydropiper ; Flavanol ; Procyanidin ; Cell suspension culture
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Cultured Polygonum hydropiper cells maintained in Murashige and Skoog (MS) medium supplemented with 10–6 m 2,4-D, 10–6 m kinetin, 0.1% casamino acids and 3% sucrose were transferred to medium containing a higher concentration of calcium chloride (15 mm). The content of flavanols in the cells on the 6th day was approximately twice that of the control culture (31.9–60.7 mg/g dry wt). However, the contents of other secondary metabolites such as chlorogenic acid and gallic acid were not changed. The levels of flavanols in the culture medium remained unchanged throughout the 21-day culture period. Of the the inorganic components supplemented to the culture medium , only elevated levels of calcium chloride induced an increase in flavanol contents of the cells. The results indicated that the elevated concentration of calcium in the culture medium played an important role in activating the accumulation of flavanols.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050656
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Simple singularities and topology of symplectically filling 4-manifold (1999)
    Springer
    Commentarii mathematici Helvetici 74 (1999), S. 575-590 
    Details
    ISSN: 1420-8946
    Keywords: Key words. Fillable contact structure, symplectic filling, simple singularity, simply elliptic singularity, the Seiberg-Witten monopole equations.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract. Topological restrictions of symplectically filling 4-manifolds of links around simple singularities are studied by using the Seiberg-Witten monopole equations. In particular, the intersection form of minimal symplectically filling 4-manifolds of the singularity of type E 8 is determined. Moreover, for the case of simply elliptic singularities, similar restrictions are obtained. In the proof, a vanishing theorem of the Seiberg-Witten invariant is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s000140050106
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...