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Modification of metal/GaN contacts with GaAs interlayers (1999)

Horiba, K. ; Ono, K. ; Fujioka, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 6539-6541

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated feasibility of GaAs interlayers for the metal/GaN interface with synchrotron-radiation photoelectron spectroscopy. We have found that the use of piranha/HCl solutions is effective as a surface cleaning technique for GaN. We have confirmed that (111) GaAs grows epitaxially on a (0001) GaN substrate. Pd/GaAs/GaN sandwich structures have been successfully fabricated with molecular beam epitaxy. We have confirmed the GaAs interlayer modifies the band diagram at the metal/GaN interface. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370158

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