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Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films (2001)

Callegari, A. ; Cartier, E. ; Gribelyuk, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 6466-6475

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. Hafnium oxide films were formed by reactive sputtering from a single Hf oxide target in a predominantly Ar atmosphere containing small additions of oxygen. Hafnium silicates were made by adding a He-diluted silane gas for Si incorporation. By changing the silane gas flow, different Si atomic concentrations were incorporated into the Hf oxide films. Depositions were performed with the substrate held at temperatures of 22 °C and 500 °C. The chemical composition of the films was determined with nuclear techniques. Optical reflectivity was used to measure the optical band gap. The film morphology was investigated by transmission electron microscopy (TEM) and the electrical properties were measured with capacitance–voltage and current–voltage measurements using aluminum gate capacitors. TEM and electrical measurement showed that a SiO2 interfacial layer of about 3 nm formed at the Si interface due to the oxidizing sputter ambient. This precluded the growth of Hf based high-K films with small equivalent thickness. After correction for the interfacial oxide layer, the dielectric constant was found to decrease from about 21 for Hf oxide to about 4–5 for the Hafnium silicates with low Hf content (3 at. % Hf and 32 at. % Si). The optical band gap was found to increase from 5.8 eV for Hf oxide to about 7 eV for the silicate films. After annealing at 1000 °C followed by a 300 °C postmetallization anneal, negligible flat band voltage shift were measured on hafnium silicate films and good interface passivation was observed. However, leakage currents increased due to the high temperature processing. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1417991

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Digitale Medien

Coherent magnetization reversal of nanoparticles with crystal and shape anisotropy (2001)

Schmidt, H. ; Ram, R. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 507-513

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We discuss coherent magnetization reversal in single-domain particles with cubic or uniaxial crystal anisotropy and present the derivation and simulation of the nucleation field in the important case of particles with shape anisotropy and a random orientation of a cubic crystal anisotropy axis. We analyze the interplay of shape and crystal anisotropy as a function of crystal orientation with respect to the applied field. In addition, we present simulations for particles with uniaxial crystal anisotropy and derive the values for remanence and coercive field of an ensemble of particles from calculated hysteresis loops in each case. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1323519

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Kinematical two-dimensional multiple-diffraction intensity profiles. Application to ω–ψ scans of silicon and diamond obtained with synchrotron radiation (2001)

Rossmanith, E. ; Hupe, A ; Kurtz, R. ; [weitere]

Copenhagen : International Union of Crystallography (IUCr)

Applied crystallography online 34 (2001), S. 157-165

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ISSN: 1600-5767

Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Thema: Geologie und Paläontologie , Physik

Notizen: In a previous paper by Rossmanith [J. Appl. Cryst. (2000), 33, 1405–1414], expressions for the calculation of multiple-diffraction patterns observed in ω–ψ scans of Bragg reflections were derived within the framework of the kinematical theory, taking into account the divergence and wavelength spread of the incident beam, as well as the mosaic structure of the crystal sample. Agreement with Cu Kα experiments was demonstrated. In this paper, it is shown that the theoretical expressions are also suitable for synchrotron radiation experiments.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1107/S0021889801001352

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Digitale Medien

Independent magnon states on magnetic polytopes (2001)

Schnack, J. ; Schmidt, H.-J. ; Richter, J. ; [weitere]

Springer

The European physical journal 24 (2001), S. 475-481

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ISSN: 1434-6036

Schlagwort(e): PACS. 75.50.Xx Molecular magnets – 75.10.Jm Quantized spin models – 75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract: For many spin systems with constant isotropic antiferromagnetic next-neighbour Heisenberg coupling the minimal energies E min(S) form a rotational band, i.e. depend approximately quadratically on the total spin quantum number S, a property which is also known as Landé interval rule. However, we find that for certain coupling topologies, including recently synthesised icosidodecahedral structures this rule is violated for high total spins. Instead the minimal energies are a linear function of total spin. This anomaly results in a corresponding jump of the magnetisation curve which otherwise would be a regular staircase.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/s10051-001-8701-6

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