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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4227-4237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 507-513 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss coherent magnetization reversal in single-domain particles with cubic or uniaxial crystal anisotropy and present the derivation and simulation of the nucleation field in the important case of particles with shape anisotropy and a random orientation of a cubic crystal anisotropy axis. We analyze the interplay of shape and crystal anisotropy as a function of crystal orientation with respect to the applied field. In addition, we present simulations for particles with uniaxial crystal anisotropy and derive the values for remanence and coercive field of an ensemble of particles from calculated hysteresis loops in each case. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 172-174 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature characteristics of bipolar cascade lasers operating up to 80 °C with room temperature, continuous-wave differential slope efficiencies of 93%, are reported. The continuous-wave characteristic lasing threshold temperature, T0, of the device is found to be 103 K for heatsink temperatures below 40 °C, dropping to 56 K for heatsink temperatures in the range 50–80 °C. Two separate regions are found to exist for the characteristic temperature of the differential slope efficiency, T1. The temperature of the topside metal contact versus bias was measured directly using a microthermocouple probe. Finite element modeling showed good agreement with measured surface temperatures. The simulations indicate that, prior to the onset of lasing in the bottom active region, nonradiative recombination heating in the bottom active region significantly heats the (lasing) top active region, leading to a reduction in the differential slope efficiency of the bipolar cascade laser. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3173-3175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a method for all-optical switching and wavelength conversion using electromagnetically induced transparency (EIT). We discuss the mechanism for the transfer of information in this scheme and determine the conditions for which N×N wavelength conversion can be realized. We compare the properties and limits of an EIT-based switch to conventional wavelength converters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3465-3467 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements in a semiconductor microcavity reveal the coupling between light- and heavy-hole excitons that is mediated by the electromagnetic vacuum. Three polariton modes constructed from superpositions of heavy-hole excitons, light-hole excitons, and photons are observed. The experimental results are in good agreement with the theory of three-coupled bosonic modes, each coupled to an independent reservoir. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3419-3421 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity noise in Fabry–Pérot lasers with low facet reflectivities is studied. A direct comparison between laser intensity fluctuations under noise suppressed and shot-noise limited current injection is made. Noise levels in excess of the shot-noise level are observed, even when the pump noise is suppressed. Also, an injection current dependent negative correlation between the intensity noise at the output facets of a laser is demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1463-1465 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room-temperature long wavelength VCL.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2474-2476 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low densities of electrically active defects and low optical losses at the wafer fused interface between InP and GaAs. Electron beam induced current analysis shows electrically active defects with an average spacing of 4.5 μm at the interface and significantly lower densities 0.4 μm from the fused interface. Optical measurements of a Fabry–Perot resonator made by fusing an InP epilayer to a GaAs/AlAs mirror demonstrate a 3% increase in mirror transmission after fusing and negligible absorption at the fused interface. Based on these results, we present design considerations for fused surface emitting lasers.
    Type of Medium: Electronic Resource
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