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  • 2005-2009  (5)
  • 1995-1999  (94)
  • 1985-1989  (42)
  • 1
    Electronic Resource
    Electronic Resource
    The energy band alignment of Xc, Γc, and Γv points in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1763-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Better carrier confinement in 0.6-μm-band laser diodes can be achieved by incorporating an AlInP layer into the (Al0.7Ga0.3)0.5In0.5P cladding layers. The effectiveness of this heterostructure, though, cannot be analyzed without detailed knowledge of the energy band alignment at the Xc, Γc, and Γv band extrema. We conducted photoluminescence and photoreflectance measurements at 12–100 K on (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (x=0.47–0.61) free from long-range ordering, and analyzed the results to obtain basic data on the alignment scheme. In these measurements we observed the Γc to Γv and the Xc to Γv transitions in bulk Al0.53In0.47P and (Al0.7Ga0.3)0.5In0.5P alloys, the AlxIn1−xP Xc to (Al0.7Ga0.3)0.5In0.5P Γv transition in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP superlattices, and the Xc to Γv and to the Γc to Γv transitions in 20-nm-wide AlxIn1−xP layers in (AlyGa1−y)0.5In0.5P/AlxIn1−xP/(AlyGa1−y)0.5In0.5P double heterostructures (x=0.33–0.39, y=0.7–1.0). We found that the energy level of Xc in AlxIn1−xP decreased by 0.09 eV as x increased from 0.47 to 0.61, the Xc of AlxIn1−xP crossed the Γc at 0.340 (±0.008), and the Γv of AlxIn1−xP crossed the Γv of (Al0.7Ga0.3)0.5In0.5P at x=0.47(±0.01). The share of the band offset at Γc for x=0.53 was 75(±3)%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364064
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  • 2
    Electronic Resource
    Electronic Resource
    Nitridation process of sapphire substrate surface and its effect on the growth of GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3487-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridated layer formed on a (0001) sapphire (α-Al2O3) substrate surface by heating at 1050 °C in ammonia (NH3) gas was analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscope (TEM) and energy dispersive x-ray spectrometry (EDX). Their influence on the growth of GaN in the combined usage of initial nitridation and successive deposition of a buffer layer was examined by AFM observations. The intensity of the N1s nitrogen peak in the XPS rapidly increased with nitridation time, reaching saturation in a few minutes, and then continued to increase gradually. This change was found to correspond to morphological change revealed by AFM observations, that is, from a flat nitridated layer to high-density (109–1010 cm−2) nitridated protrusions. TEM observations and EDX measurements showed that the nitridation forms an amorphous layer consisting of AlNxO1−x. The flat nitridated layer, when combined with a buffer layer, favors two-dimensional growth of a thick GaN layer on it, while the layer with protrusions results in three-dimensional growth. Thus, thick GaN layers with smooth surfaces can be grown by controlling the surface of the nitridated layer, where a crystal-amorphous-crystal growth mechanism is successfully operating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361398
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Nitridation process of sapphirre substrate surface and its effect on the growth of GaN'' [J. Appl. Phys. 79, 3487 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1942-1943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363832
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  • 4
    Electronic Resource
    Electronic Resource
    Vibrationally resolved threshold photoelectron–photoion coincidence spectra of ArKr (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 1324-1328 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Threshold photoelectron–photoion coincidence (TPEPICO) spectra of ArKr were measured between the ionization threshold and 16.0 eV by using the penetrating field technique and synchrotron radiation. The ground state (X 1/2 state) vibrational progression of ArKr+ was observed from v′=2 to 27 and the first ionization energy was estimated to be 108 703±12 cm−1 by extrapolation to v′=0. The other excited states constructed from the ground state atom and ion were also observed. The ionization energies to the A1 3/2, A2 1/2, C1 3/2, B 1/2, and C2 1/2 states from the neutral ground state were 112 274, 117 388, 126 211, 126 614, and 127 952 cm−1, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476683
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution threshold photoelectron spectra of molecular oxygen in the 18–24 eV region (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 6240-6248 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A high-resolution threshold photoelectron spectrum of molecular oxygen has been studied between 18 and 24 eV using the penetrating field technique and a synchrotron radiation source. Nine ionic states are observed, and three of them for the first time. Higher vibrational levels of the b 4Σg− state and the 2Φu state are also studied. Furthermore, the doublet structure of the 2Φu state is resolved for the first time. Two new states with quartet multiplicity are assigned to the 4Πg and the 4Πu states which dissociate to the limit, [O(3P)+O+(2D)], at 22.059 eV. Also we tentatively assign another newly observed band to the 2Πu state. The long vibrational progression of the 3 2Πu state is clearly observed in the region 22.3–23.8 eV with doublet splitting which increases with increasing of the vibrational quantum number. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476031
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  • 6
    Electronic Resource
    Electronic Resource
    Ground and excited states of Xe+2 observed by high resolution threshold photoelectron spectroscopy of Xe2 (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 1553-1560 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Threshold photoelectron spectra of the xenon dimer have been observed with a resolution of 2 meV in the wavelength range 920–945 A(ring) and 1022–1112 A(ring) using the penetrating field technique and synchrotron radiation. Threshold photoelectron bands associated with transitions to the A2 Σ+1/2u, B2 Π3/2g, C2 Π3/2u, C2 Π1/2u, and D2 Σ+1/2g states of Xe+2 have been identified. Vibrational structure associated with the C2 Π1/2u state has been observed for the first time and a new value of the D2 Σ+1/2g state ionization potential is reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468887
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  • 7
    Electronic Resource
    Electronic Resource
    Vibrational structure of the N+2 ground state observed by threshold photoelectron spectroscopy (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 9357-9361 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The long vibrational progression of the ground state of N+2 was observed in a high resolution threshold photoelectron spectrum obtained using the penetrating field technique and synchrotron radiation. Vibrational states were observed up to v′=67 for the first time and the final vibrational level was deduced to be v′=77 from extrapolation. The complete molecular constants of this state were obtained and the entire potential curve was then drawn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471681
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  • 8
    Electronic Resource
    Electronic Resource
    Phase transition in ionic gels induced by copper complexation (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 83-85 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00143a013
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  • 9
    Electronic Resource
    Electronic Resource
    Development of an in-vacuum minipole undulator array for National Synchrotron Light Source In-Vacuum UNdulator (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 18-24 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An in-vacuum minipole (short period) insertion device has been developed in a collaboration between SPring-8 and the National Synchrotron Light Source (NSLS). The magnetic arrays were assembled, field measured, corrected, and vacuum tested by SPring-8 and were installed in an NSLS-developed chamber with mechanical parts in the NSLS X-Ray Ring (E=2.584 GeV) in May 1997 and a successful commissioning of the device was carried out in June 1997. The device is made of permanent magnets with 30.5 periods and a period length of 11 mm. It is designed to produce fundamental radiation at 4.6 keV, and with a modest value of deflection parameter (K=0.7 at 3.3& mm gap) enables higher harmonics to be used as well, for a variety of experiments. A detailed description of the mechanical support and vacuum chamber will be reported elsewhere. We describe technical challenges encountered in constructing this type of device, and present an outline of our collaboration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148871
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  • 10
    Electronic Resource
    Electronic Resource
    An elliptical wiggler for SPring-8 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1937-1939 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a study for the realization of an elliptical multipole wiggler to be installed on the pilot beamline dedicated to material science at SPring-8. Such a wiggler should meet the requirements of third generation synchrotron sources (e.g., large horizontal aperture), as it uses a planar structure (two jaws above and below the vacuum chamber). Compared to the APPLE concept proposed by Sasaki, this new wiggler exhibits similar performances: 65% (85%/90%) circular polarization rate can be obtained up to 300 keV (200/150 keV) with high brilliance ((approximately-greater-than)1015photons/s/0.1%/mr2/mm2). Moreover this new design is easier to characterize than APPLE, since the sources of vertical and horizontal magnetic fields are independent. The effects of the magnet interactions (e.g., demagnetization in magnets and the consecutive loss of field) are not considered in the following but should be addressed in a future paper. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145763
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