ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The development of lapping and polishing technologies for SiC single crystal wafers hasrealized the fabrication of an extremely flat SiC wafer with excellent surface quality. To improve theSiC wafer flatness, we developed a four-step lapping process consisting of four stages of both-sidelapping with different grit-size abrasives. We have applied this process to lapping of 2-inch-diameterSiC wafers and obtained an excellent flatness with TTV (total thickness variation) of less than 3 μm,LTV (local thickness variation) of less than 1 μm, and SORI smaller than 10 μm. We also developeda novel MCP (mechano-chemical polishing) process for SiC wafers to obtain a damage-free smoothsurface. During MCP, oxidizing agents added to colloidal silica slurry, such as NaOCl and H2O2,effectively oxidize the SiC wafer surface, and then the resulting oxides are removed by colloidal silica.AFM (atomic force microscope) observation of polished wafer surface revealed that this processallows us to have excellent surface smoothness as low as Ra=0.168 nm and RMS=0.2 nm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.819.pdf
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