ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substratesduring high temperature treatment has been investigated in terms of the surface preparationconditions of substrates. Substrates with a relatively large surface roughness showed a resistivityincrease after annealing at 1100°C, which was confirmed to be caused by the formation andexpansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence ofthe stacking faults largely depended on the surface preparation conditions of the substrates, whichindicates that the primary nucleation sites of stacking faults exist in the near-surface regions ofsubstrates. In this regard, mechano-chemically polished (MCP) substrates with a minimum surfaceroughness (〈 0.3 nm) exhibited no resistivity increase and very few stacking faults after annealingeven when the nitrogen concentration of the substrates exceeded 1×1019 cm-3
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.341.pdf