ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The defect distribution in 4H-SiC single crystals in dependence on the seed polarity andits off-orientation was investigated by KOH-etching, optical microscopy and X-ray topography.Micropipe density, stacking fault density and dislocation density were determined for 2” crystalsgrown in 〈000-1〉 direction 0 - 7° off towards 〈11-20〉 and for crystals up to 1” in diameter grownin 〈11-20〉 or a- and 〈1-100〉 or m-directions and using repeated a-face growth. For the growth inpolar directions the micropipe density and dislocation density decrease with increasing offorientationof the seed. A similar behavior was found for the stacking fault density and dislocationdensity in non-polar directions with off-orientation to c-direction. Nevertheless, while thedislocation density could be reduced up to three orders of magnitude for the growth along non-polardirections, the stacking fault density was continuously increasing. Additionally, the defectdistribution after repeated a-face growth will be discussed in terms of growth related and kineticmodels
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.9.pdf
Permalink
